公开(公告)号：US10121731B2

公开(公告)日：2018-11-06

申请号：US15290899

申请日：2016-10-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Cheon Park ,  Won Il Lee ,  Chajea Jo ,  Taeje Cho

IPC: H01L23/48 ,  H01L23/13 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L23/00 ,  H01L25/065

Abstract: A semiconductor device includes a semiconductor chip having an active surface and a non-active surface opposite to the active surface, an upper insulating layer provided on the non-active surface of semiconductor chip, and a via and a connection pad penetrating the semiconductor chip and the upper insulating layer, respectively. The connection pad has a first surface exposed outside the upper insulating layer and a second surface opposite to the first surface and facing the semiconductor chip. The first surface of the connection pad is coplanar with an upper surface of the upper insulating layer.

公开(公告)号：US10748953B2

公开(公告)日：2020-08-18

申请号：US16803041

申请日：2020-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghoe Cho ,  Jongbo Shim ,  Seunghoon Yeon ,  Won Il Lee

IPC: H01L21/00 ,  H01L27/146

Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor substrate having a top surface, on which has been formed a color filter and a micro-lens, and a bottom surface opposite to the top surface, forming a redistribution line on the bottom surface of the semiconductor substrate, and forming on the bottom surface of the semiconductor substrate a passivation layer covering the redistribution line. After the redistribution line and passivation layer are formed, an oxide layer between the redistribution line and the passivation is formed at a temperature that avoids thermal damage to the color filter and the micro-lens.