公开(公告)号：US20220093735A1

公开(公告)日：2022-03-24

申请号：US17541625

申请日：2021-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Min SONG ,  Woo-Seok PARK ,  Jung-Gil YANG ,  Geum-Jong BAE ,  Dong-Il Bae

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/08 ,  H01L27/088 ,  H01L29/78 ,  H01L29/66 ,  H01L21/306 ,  H01L21/308 ,  H01L21/02 ,  H01L29/10 ,  B82Y10/00 ,  H01L29/786 ,  H01L29/775 ,  H01L29/40

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate and a gate structure on the substrate. The semiconductor device includes a channel on the substrate. The semiconductor device includes a source/drain layer on the channel. Moreover, the semiconductor device includes a spacer on a sidewall of the gate structure. The spacer includes a central portion overlapping the channel in a vertical direction, and a protrusion portion protruding from the central portion. Related methods of manufacturing semiconductor devices are also provided.

公开(公告)号：US20190096996A1

公开(公告)日：2019-03-28

申请号：US16052091

申请日：2018-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Min SONG ,  Woo-Seok PARK ,  Jung-Gil YANG ,  Geum-Jong BAE ,  Dong-Il Bae

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/08 ,  H01L27/088 ,  H01L29/78 ,  H01L29/66 ,  H01L21/306 ,  H01L21/308 ,  H01L21/02

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate and a gate structure on the substrate. The semiconductor device includes a channel on the substrate. The semiconductor device includes a source/drain layer on the channel. Moreover, the semiconductor device includes a spacer on a sidewall of the gate structure. The spacer includes a central portion overlapping the channel in a vertical direction, and a protrusion portion protruding from the central portion. Related methods of manufacturing semiconductor devices are also provided.

公开(公告)号：US20200381514A1

公开(公告)日：2020-12-03

申请号：US16996334

申请日：2020-08-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Min SONG ,  Woo-Seok PARK ,  Jung-Gil YANG ,  Geum-Jong BAE ,  Dong-Il Bae

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/08 ,  H01L27/088 ,  H01L29/78 ,  H01L29/66 ,  H01L21/306 ,  H01L21/308 ,  H01L21/02 ,  H01L29/10 ,  B82Y10/00 ,  H01L29/786 ,  H01L29/775 ,  H01L29/40

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate and a gate structure on the substrate. The semiconductor device includes a channel on the substrate. The semiconductor device includes a source/drain layer on the channel. Moreover, the semiconductor device includes a spacer on a sidewall of the gate structure. The spacer includes a central portion overlapping the channel in a vertical direction, and a protrusion portion protruding from the central portion. Related methods of manufacturing semiconductor devices are also provided.