公开(公告)号：US09941280B2

公开(公告)日：2018-04-10

申请号：US15228292

申请日：2016-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwan-Young Kim ,  Jae-Hyun Yoo ,  Jin-Hyun Noh ,  Woo-Yeol Maeng ,  Yong-Woo Jeon

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/08 ,  H01L23/528

CPC classification number: H01L27/0886 ,  H01L23/528 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0865 ,  H01L29/0873 ,  H01L29/0882 ,  H01L29/4232 ,  H01L29/4236 ,  H01L29/7816 ,  H01L29/7835 ,  H01L29/785

Abstract: According to example embodiments, a semiconductor device includes a first fin, a second fin that is separated from the first fin, and a gate on the first fin and the second fin. The gate crosses the first fin and the second fin. The first fin includes a first doped area at both sides of the gate. The first doped area is configured to have a first voltage applied thereto. The second fin includes a second doped area at both sides of the gate. The second doped area is configured to have a second voltage applied thereto. The second voltage is different than the first voltage.