SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20160372593A1

    公开(公告)日:2016-12-22

    申请号:US15052177

    申请日:2016-02-24

    Abstract: A semiconductor device includes a first well disposed in a substrate and including a first impurity of a first conductivity type, a second well disposed in the substrate, including a second impurity of a second conductivity type different from the first conductivity type, and having first to third portions, and a gate structure formed on the first well and the second well, wherein the second portion is disposed between the first portion and the third portion, the first portion and the third portion are formed deeper than the second portion, and concentration of the second impurity of the first portion and the third portion is greater than concentration of the second impurity of the second portion.

    Abstract translation: 半导体器件包括:第一阱,其布置在衬底中并且包括第一导电类型的第一杂质;第二阱,设置在衬底中,包括不同于第一导电类型的第二导电类型的第二杂质,并且首先 第三部分和形成在第一阱和第二阱上的栅极结构,其中第二部分设置在第一部分和第三部分之间,第一部分和第三部分形成得比第二部分更深,并且浓度 第一部分和第三部分的第二杂质大于第二部分的第二杂质的浓度。

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