公开(公告)号：US20230422486A1

公开(公告)日：2023-12-28

申请号：US18109442

申请日：2023-02-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiseok LEE ,  Jongmin KIM ,  Hyo-Sub KIM ,  Hui-Jung KIM ,  Sohyun PARK ,  Junhyeok AHN ,  Chan-Sic YOON ,  Myeong-Dong LEE ,  Woojin JEONG ,  Wooyoung CHOI

IPC: H10B12/00

CPC classification number: H10B12/482 ,  H10B12/34 ,  H10B12/053 ,  H10B12/485

Abstract: A semiconductor device includes a cell active pattern including a first portion and a second portion that are spaced apart from each other; a gate structure between the first portion and the second portion of the cell active pattern; a bit-line contact on the first portion of the cell active pattern; a connection pattern on the second portion of the cell active pattern; and a cell separation pattern in contact with the bit-line contact and the connection pattern, wherein the cell separation pattern includes a first sidewall in contact with the connection pattern and a second sidewall in contact with the bit-line contact, an upper portion of the second sidewall of the cell separation pattern is in contact with the bit-line contact, and a lower portion of the second sidewall of the cell separation pattern is spaced apart from the bit-line contact.

公开(公告)号：US20230320080A1

公开(公告)日：2023-10-05

申请号：US18093561

申请日：2023-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhyeok AHN ,  Woojin JEONG ,  Hui-Jung KIM

IPC: H10B12/00

CPC classification number: H10B12/485 ,  H10B12/482 ,  H10B12/488

Abstract: A semiconductor memory device includes an active portion defined by a device isolation pattern, the active portion including a first impurity region located at a center portion of the active portion and a second impurity region located at an end portion of the active portion, a word line provided on the active portion and extending in a first direction, a bit line provided on the word line and extending in a second direction crossing the first direction, a bit line contact provided between the bit line and the first impurity region of the active portion, a storage node pad provided on the second impurity region of the active portion, and a storage node contact provided on the storage node pad and at a side of the bit line.

公开(公告)号：US20150242065A1

公开(公告)日：2015-08-27

申请号：US14628924

申请日：2015-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwanghyun KO ,  Doosuk KANG ,  Yonghak PARK ,  Youngsu LEE ,  Woojin JEONG ,  Junhee CHO

IPC: G06F3/0481 ,  G09G5/38 ,  G06F3/0488 ,  G09G5/14 ,  G06F3/0482 ,  G06F3/0484

CPC classification number: G06F3/0481 ,  G06F3/04817 ,  G06F3/0482 ,  G06F3/04847 ,  G06F3/04886 ,  G06F3/14 ,  G06F2203/04803 ,  G06F2203/04806 ,  G09G5/14 ,  G09G5/38 ,  G09G2320/08 ,  G09G2340/0407 ,  G09G2340/0464 ,  G09G2340/14 ,  G09G2354/00

Abstract: Disclosed is a screen display method, including recognizing a request for displaying a size-adjusted screen, displaying the size-adjusted screen on one region of a display unit in response to the request, and displaying an auxiliary screen on an outside region of the size-adjusted screen.

Abstract translation: 公开了一种屏幕显示方法，包括：识别显示尺寸调整屏幕的请求，响应于该请求在显示单元的一个区域上显示尺寸调整的屏幕，并且在尺寸的外部区域上显示辅助屏幕 调整屏幕。