公开(公告)号：US11232029B2

公开(公告)日：2022-01-25

申请号：US17003346

申请日：2020-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonsik Sohn ,  Hyunjoong Kim ,  Woongjae Song ,  Soowoong Ahn ,  Seunghyun Cho ,  Jihyun Choi

IPC: G11C8/00 ,  G06F12/06 ,  H01L23/48 ,  H01L25/065

Abstract: According to some example embodiments of the inventive concepts, there is provided a method of operating a stacked memory device including a plurality of memory dies stacked in a vertical direction, the method including receiving a command and an address from a memory controller, determining a stack ID indicating a subset of the plurality of memory dies by decoding the address, and accessing at least two memory dies among the subset of memory dies corresponding to the stack ID such that the at least two memory dies are non-adjacent.

公开(公告)号：US11599458B2

公开(公告)日：2023-03-07

申请号：US17551707

申请日：2021-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonsik Sohn ,  Hyunjoong Kim ,  Woongjae Song ,  Soowoong Ahn ,  Seunghyun Cho ,  Jihyun Choi

IPC: G11C8/00 ,  G06F12/06 ,  H01L23/48 ,  H01L25/065

Abstract: According to some example embodiments of the inventive concepts, there is provided a method of operating a stacked memory device including a plurality of memory dies stacked in a vertical direction, the method including receiving a command and an address from a memory controller, determining a stack ID indicating a subset of the plurality of memory dies by decoding the address, and accessing at least two memory dies among the subset of memory dies corresponding to the stack ID such that the at least two memory dies are non-adjacent.