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公开(公告)号：US10862112B2
公开(公告)日：2020-12-08
申请号：US16283267
申请日：2019-02-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Inhyuk Son , Jonghwan Park , Jaejun Chang , Junhwan Ku , Xiangshu Li , Jaeman Choi
IPC: H01M4/36 , H01M4/62 , H01B1/04 , B82Y30/00 , H01J1/304 , H01L35/18 , H01L35/20 , H01L35/22 , H01L35/32 , H01M4/13 , H01M4/48 , F21K2/08
Abstract: A composite including: at least one selected from a silicon oxide of the formula SiO2 and a silicon oxide of the formula SiOx wherein 0
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公开(公告)号：US10249871B2
公开(公告)日：2019-04-02
申请号：US14733028
申请日：2015-06-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Inhyuk Son , Jonghwan Park , Jaejun Chang , Junhwan Ku , Xiangshu Li , Jaeman Choi
IPC: H01M4/13 , H01M4/36 , H01M4/133 , H01B1/04 , H01M4/48 , H01M4/62 , F21K2/08 , H01J1/304 , H01L35/18 , H01L35/20 , H01L35/22 , H01L35/32
Abstract: A composite including: at least one selected from a silicon oxide of the formula SiO2 and a silicon oxide of the formula SiOx wherein 0
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Patent Agency Ranking
3.发明申请COMPOSITE, ELECTROCHEMICAL ACTIVE MATERIAL COMPOSITE USING THE COMPOSITE, ELECTRODE INCLUDING THE COMPOSITE OR ELECTROCHEMICAL ACTIVE MATERIAL COMPOSITE, LITHIUM BATTERY INCLUDING THE ELECTRODE , FIELD EMISSIONDEVICE INCLUDING THE COMPOSITE, BIOSENSOR INCLUDING THE COMPOSITE , SEMICONDUCTOR DEVICE INCLUDING THE COMPOSITE , AND THERMOELECTRIC DEVICE INCLUDING THE COMPOSITE 审中-公开使用复合材料的电化学活性材料复合材料，包括复合材料或电化学活性材料复合材料的电极，包括电极的锂电池，包括复合材料的场发射装置，包括复合材料的生物传感器，包括复合材料的半导体器件，以及包括复合材料的热电偶装置公开(公告)号：US20150380728A1
公开(公告)日：2015-12-31
申请号：US14733028
申请日：2015-06-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Inhyuk Son , Jonghwan Park , Jaejun Chang , Junhwan Ku , Xiangshu Li , Jaeman Choi
CPC classification number: H01M4/364 , F21K2/08 , H01J1/304 , H01J2201/30461 , H01J2201/30496 , H01L35/18 , H01L35/20 , H01L35/22 , H01L35/32 , H01M4/13 , H01M4/483 , H01M4/625
Abstract: A composite including: at least one selected from a silicon oxide of the formula SiO2 and a silicon oxide of the formula SiOx wherein 0
Abstract translation: 一种复合材料，包括：选自式SiO 2的氧化硅和式SiO x的氧化硅中的至少一种，其中0
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公开(公告)号：US10862110B2
公开(公告)日：2020-12-08
申请号：US16283221
申请日：2019-02-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Inhyuk Son , Jonghwan Park , Jaejun Chang , Junhwan Ku , Xiangshu Li , Jaeman Choi
IPC: H01M4/36 , H01B1/04 , B82Y30/00 , H01J1/304 , H01L35/18 , H01L35/20 , H01L35/22 , H01L35/32 , H01M4/13 , H01M4/48 , H01M4/62 , F21K2/08
Abstract: A composite including: at least one selected from a silicon oxide of the formula SiO2 and a silicon oxide of the formula SiOx wherein 0
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公开(公告)号：US11870060B2
公开(公告)日：2024-01-09
申请号：US17090331
申请日：2020-11-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Inhyuk Son , Jonghwan Park , Jaejun Chang , Junhwan Ku , Xiangshu Li , Jaeman Choi
IPC: H01M4/36 , H01M4/13 , H01M4/48 , H01M4/62 , H01B1/04 , H01J1/304 , F21K2/08 , B82Y30/00 , H10N10/17 , H10N10/853 , H10N10/854 , H10N10/855
CPC classification number: H01M4/364 , B82Y30/00 , F21K2/08 , H01B1/04 , H01J1/304 , H01M4/13 , H01M4/483 , H01M4/625 , H10N10/17 , H10N10/853 , H10N10/854 , H10N10/855 , H01J2201/30461 , H01J2201/30496
Abstract: A composite including: at least one selected from a silicon oxide of the formula SiO2 and a silicon oxide of the formula SiOx wherein 0
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公开(公告)号：US11837714B2
公开(公告)日：2023-12-05
申请号：US17090324
申请日：2020-11-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Inhyuk Son , Jonghwan Park , Jaejun Chang , Junhwan Ku , Xiangshu Li , Jaeman Choi
IPC: H01M4/36 , H01J1/304 , H01M4/13 , H01M4/48 , H01M4/62 , H01B1/04 , B82Y30/00 , F21K2/08 , H10N10/17 , H10N10/853 , H10N10/854 , H10N10/855
CPC classification number: H01M4/364 , B82Y30/00 , F21K2/08 , H01B1/04 , H01J1/304 , H01M4/13 , H01M4/483 , H01M4/625 , H10N10/17 , H10N10/853 , H10N10/854 , H10N10/855 , H01J2201/30461 , H01J2201/30496
Abstract: A composite including: at least one selected from a silicon oxide of the formula SiO2 and a silicon oxide of the formula SiOx wherein 0
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公开(公告)号：US10862111B2
公开(公告)日：2020-12-08
申请号：US16283250
申请日：2019-02-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Inhyuk Son , Jonghwan Park , Jaejun Chang , Junhwan Ku , Xiangshu Li , Jaeman Choi
IPC: H01M4/36 , H01B1/04 , B82Y30/00 , H01J1/304 , H01L35/18 , H01L35/20 , H01L35/22 , H01L35/32 , H01M4/13 , H01M4/48 , H01M4/62 , F21K2/08
Abstract: A composite including: at least one selected from a silicon oxide of the formula SiO2 and a silicon oxide of the formula SiOx wherein 0
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