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    Field emission devices and methods of manufacturing emitters thereof
    2.
    发明授权
    Field emission devices and methods of manufacturing emitters thereof 有权
    场致发射装置及其制造方法

    公开(公告)号：US09396901B2

    公开(公告)日：2016-07-19

    申请号：US14474213

    申请日：2014-09-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Donggu Lee ,  Shanghyeun Park ,  Yongchul Kim ,  Ilhwan Kim ,  Taewon Jeong

    IPC: H01J1/308 ,  H01J9/02 ,  H01J1/304

    CPC classification number: H01J9/025 ,  H01J1/3046 ,  H01J2201/30423 ,  H01J2201/30461

    Abstract: A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode around the opening. The electron emission source may comprise a plurality of graphene thin films vertically supported in the cathode electrode toward the opening.

    Abstract translation: 场发射器件可以包括：发射器，包括阴极电极和由阴极电极支撑的电子发射源; 围绕发射极的绝缘间隔物，绝缘间隔物形成作为从电子发射源发射的电子的路径的开口; 和/或围绕开口的栅电极。 电子发射源可以包括在阴极中朝向开口垂直支撑的多个石墨烯薄膜。

    FIELD EMISSION DEVICES AND METHODS OF MANUFACTURING GATE ELECTRODES THEREOF
    6.
    发明申请
    FIELD EMISSION DEVICES AND METHODS OF MANUFACTURING GATE ELECTRODES THEREOF 审中-公开
    场发射装置及其制造门电极的方法

    公开(公告)号：US20150060757A1

    公开(公告)日：2015-03-05

    申请号：US14471713

    申请日：2014-08-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-gu LEE ,  Shang-hyeun PARK ,  Yong-chul KIM ,  Chang-soo LEE ,  Do-yoon KIM

    IPC: H01J1/308 ,  H01J9/02 ,  H01J1/304

    CPC classification number: H01J9/025 ,  H01J1/3046 ,  H01J35/065 ,  H01J2201/30423 ,  H01J2201/30461

    Abstract: A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode comprising a graphene sheet covering the opening. A method of manufacturing a gate electrode may comprise: forming a graphene thin film on one surface of a conductive film; forming a mask layer having an etching opening on another surface of the conductive film, wherein the etching opening exposes a portion of the conductive film; partially removing the conductive film through the etching opening to partially expose the graphene thin film; and/or removing the mask layer.

    Abstract translation: 场发射器件可以包括：发射器，包括阴极电极和由阴极电极支撑的电子发射源; 围绕发射极的绝缘间隔物，绝缘间隔物形成作为从电子发射源发射的电子的路径的开口; 和/或包括覆盖该开口的石墨烯片的栅电极。 制造栅电极的方法可以包括：在导电膜的一个表面上形成石墨烯薄膜; 在所述导电膜的另一表面上形成具有蚀刻开口的掩模层，其中所述蚀刻开口暴露所述导电膜的一部分; 通过蚀刻开口部分去除导电膜以部分地暴露石墨烯薄膜; 和/或去除掩模层。

    Monolayer and/or Few-Layer Graphene On Metal or Metal-Coated Substrates
    8.
    发明申请
    Monolayer and/or Few-Layer Graphene On Metal or Metal-Coated Substrates 审中-公开
    单层和/或金属或金属涂层基板上的少量层状石墨烯

    公开(公告)号：US20100255984A1

    公开(公告)日：2010-10-07

    申请号：US12753281

    申请日：2010-04-02

    Applicant: Peter Werner Sutter ,  Eli Anguelova Sutter

    Inventor： Peter Werner Sutter ,  Eli Anguelova Sutter

    IPC: B01J21/18 ,  C01B31/04 ,  H01B1/04 ,  H01B1/02 ,  B01J23/46 ,  B32B5/00 ,  G02B5/10 ,  H01J3/14

    CPC classification number: H05H3/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/188 ,  C01B2204/04 ,  G02B1/105 ,  G02B1/14 ,  G02B5/10 ,  H01J3/14 ,  H01J2201/30461

    Abstract: Graphene is a single atomic layer of sp2-bonded C atoms densely packed into a two-dimensional honeycomb crystal lattice. A method of forming structurally perfect and defect-free graphene films comprising individual mono crystalline domains with in-plane lateral dimensions of up to 200 μm or more is presented. This is accomplished by controlling the temperature-dependent solubility of interstitial C of a transition metal substrate having a suitable surface structure. At elevated temperatures, C is incorporated into the bulk at higher concentrations. As the substrate is cooled, a lowering of the interstitial C solubility drives a significant amount of C atoms to the surface where graphene islands nucleate and gradually increase in size with continued cooling. Ru(0001) is selected as a model system and electron microscopy is used to observe graphene growth during cooling from elevated temperatures. With controlled cooling, large arrays of macroscopic single-crystalline graphene domains covering the entire transition metal surface are produced. As the graphene domains coalesce to a complete layer, a second graphene layer is formed, etc. By controlling the interstitial C concentration and the cooling rate, graphene layers with thickness up to 10 atomic layers or more are formed in a controlled, layer-by-layer fashion.

    Abstract translation: 石墨烯是密集填充到二维蜂窝晶格中的sp2键合的C原子的单原子层。 提出了一种形成结构完美和无缺陷的石墨烯薄膜的方法，其包括单面单晶畴，其面内横向尺寸高达200μm以上。 这通过控制具有合适表面结构的过渡金属基底的间隙C的温度依赖性溶解度来实现。 在升高的温度下，C以更高的浓度加入到本体中。 当衬底被冷却时，间隙C溶解度的降低将大量的C原子驱动到石墨烯岛成核的表面上并随着冷却逐渐增大。 选择Ru（0001）作为模型系统，并且使用电子显微镜观察从高温冷却期间的石墨烯生长。 通过受控冷却，产生覆盖整个过渡金属表面的宏观单晶石墨烯畴的大阵列。 当石墨烯畴结合到完整的层时，形成第二个石墨烯层等。通过控制间隙C浓度和冷却速率，在受控的层间形成厚度达10个原子层或更多层的石墨烯层 时尚流行。

    Electron emission device and electron microscope
    9.
    发明授权
    Electron emission device and electron microscope 有权

    公开(公告)号：US12051557B2

    公开(公告)日：2024-07-30

    申请号：US17609445

    申请日：2020-03-23

    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

    Inventor： Katsuhisa Murakami ,  Masayoshi Nagao

    IPC: H01J1/312 ,  H01J1/308

    CPC classification number: H01J1/308 ,  H01J1/312 ,  H01J2201/30461

    Abstract: An electron emission device having a narrow electron energy range and excellent electron emitting efficiency, and an electron microscope using the electron emission device. An electron emission device having a laminated structure in which a first electrode, an electron accelerating layer made of an insulating film, and a second electrode are laminated in this order, in which the second electrode through which electrons transmit and from whose surface electrons emit, and the energy width of the emitted electrons is 100 meV or more and 600 meV or less. For example, graphene having one or more layers and 20 layers or less can be used as the second electrode, and hexagonal boron nitride can be used as the insulating film.

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