公开(公告)号：US20170330727A1

公开(公告)日：2017-11-16

申请号：US15453595

申请日：2017-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： YEONGKWANG LEE ,  YONGKYUN PARK ,  DONGSOO LEE ,  SANGHEON LEE

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/3222 ,  H01J37/32238 ,  H01J37/3244 ,  H01J2237/002

Abstract: Embodiments of the inventive concepts provide an antenna, a microwave plasma source including the antenna, a plasma processing apparatus including the antenna, and a method of manufacturing method of a semiconductor device. The antenna includes a lower ring having a plurality of output slits, and an upper ring disposed on the lower ring. The upper ring has an input slit transmitting microwave power from an outside of the upper ring onto the lower ring. The upper ring is configured to rotate with respect to the lower ring.