公开(公告)号：US20190198296A1

公开(公告)日：2019-06-27

申请号：US16104496

申请日：2018-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： SIQING LU ,  YEONGKWANG LEE ,  KEESOO PARK ,  SEUNGJAE LEE ,  JINHYUK CHOI

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/3222 ,  H01J37/32201 ,  H01J37/32229 ,  H01J37/32238 ,  H01J37/32449 ,  H01J37/32513 ,  H01J37/32834 ,  H01J2237/3341 ,  H01L21/67011

Abstract: Disclosed are plasma processing apparatuses and methods of manufacturing semiconductor devices. The plasma processing apparatus includes a chamber including lower and upper housings, a window in the upper housing, an antenna for generating plasma of a first gas, wherein the antenna is disposed on the window and in the upper housing, a first pump for exhausting the first gas between the window and the lower housing, wherein the first pump is associated with the lower housing, a power supply for providing a power output, wherein the power supply is connected to the antenna through a first cavity of the upper housing, and a second pump for pumping a second gas between the window and in the upper housing so as to hold the antenna and the window onto an inside wall of the upper housing.

公开(公告)号：US20190122860A1

公开(公告)日：2019-04-25

申请号：US15870800

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： YEONGKWANG LEE ,  Sunggil KANG ,  Sang Ki NAM ,  Kwangyoub HEO ,  KYUHEE HAN

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/3244 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32366 ,  H01J37/32422 ,  H01J37/3266 ,  H01L21/6831

Abstract: A chamber has an upper housing and a lower housing and receives a reaction gas. A first plasma source includes electron beam sources providing electron beams into the upper housing to generate an upper plasma. A second plasma source includes holes generating a lower plasma within the holes connecting the upper housing and the lower housing. Radicals of the upper plasma, radicals of the lower plasma, and ions of the lower plasma are provided, through the holes, to the lower housing so that the lower housing has radicals and ions at a predetermined ratio of the ions to the radicals in concentration. The second plasma source divides the chamber into the upper housing and the lower housing. A wafer chuck is positioned in the lower housing to receive a wafer.

公开(公告)号：US20170330727A1

公开(公告)日：2017-11-16

申请号：US15453595

申请日：2017-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： YEONGKWANG LEE ,  YONGKYUN PARK ,  DONGSOO LEE ,  SANGHEON LEE

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/3222 ,  H01J37/32238 ,  H01J37/3244 ,  H01J2237/002

Abstract: Embodiments of the inventive concepts provide an antenna, a microwave plasma source including the antenna, a plasma processing apparatus including the antenna, and a method of manufacturing method of a semiconductor device. The antenna includes a lower ring having a plurality of output slits, and an upper ring disposed on the lower ring. The upper ring has an input slit transmitting microwave power from an outside of the upper ring onto the lower ring. The upper ring is configured to rotate with respect to the lower ring.