公开(公告)号：US20210142985A1

公开(公告)日：2021-05-13

申请号：US16915437

申请日：2020-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： AKIRA KOSHIISHI ,  MASATO HORIGUCHI ,  YONGWOO LEE ,  KYOHYEOK KIM ,  DOWON KIM ,  YUNHWAN KIM ,  YOUNGJIN NOH ,  JONGWOO SUN ,  TAEIL CHO

IPC: H01J37/32 ,  H01L21/683

Abstract: A plasma processing apparatus includes a chamber, a lower and upper electrodes vertically spaced apart from each other in the chamber, a RF transmitting part connected to the lower electrode and configured to supply RF power to the lower electrode, a ground plate spaced downwardly from the lower electrode, and an insulating member laterally surrounding a cavity formed between the lower electrode and the ground plate. The cavity is isolated from a region under the ground plate by the ground plate.