公开(公告)号：US20210142985A1

公开(公告)日：2021-05-13

申请号：US16915437

申请日：2020-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： AKIRA KOSHIISHI ,  MASATO HORIGUCHI ,  YONGWOO LEE ,  KYOHYEOK KIM ,  DOWON KIM ,  YUNHWAN KIM ,  YOUNGJIN NOH ,  JONGWOO SUN ,  TAEIL CHO

IPC: H01J37/32 ,  H01L21/683

Abstract: A plasma processing apparatus includes a chamber, a lower and upper electrodes vertically spaced apart from each other in the chamber, a RF transmitting part connected to the lower electrode and configured to supply RF power to the lower electrode, a ground plate spaced downwardly from the lower electrode, and an insulating member laterally surrounding a cavity formed between the lower electrode and the ground plate. The cavity is isolated from a region under the ground plate by the ground plate.

公开(公告)号：US20200168443A1

公开(公告)日：2020-05-28

申请号：US16445423

申请日：2019-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEJIN OH ,  KYOHYEOK KIM ,  JONGWOO SUN ,  DOUGYONG SUNG ,  SUNG-KI LEE ,  JAEHYUN LEE

IPC: H01J37/32 ,  H01J37/22 ,  G01N21/94 ,  H01L21/66 ,  H01L21/3065

Abstract: A substrate processing method includes providing a substrate into a process chamber; introducing a reference light into the process chamber; generating a plasma light in the process chamber while performing an etching process on the substrate; receiving the reference light and the plasma light; and detecting an etching end point by analyzing the plasma light and the reference light. Detecting the etching end point includes a compensation adjustment based on a change rate of an absorption signal of the reference light with respect to a change rate of an emission signal of the plasma light