公开(公告)号：US20190304754A1

公开(公告)日：2019-10-03

申请号：US16361341

申请日：2019-03-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNG BO SHIM ,  DOUG YONG SUNG ,  YOUNG JIN NOH ,  YONG WOO LEE ,  JI SOO IM ,  HYEONG MO KANG ,  PETER BYUNG H HAN ,  CHEON KYU LEE ,  MASATO HORIGUCHI

IPC: H01J37/32 ,  H01L21/683 ,  H03H7/38 ,  H01L21/67 ,  H03H7/01

Abstract: Plasma processing equipment includes a chuck stage for supporting a wafer and including a lower electrode, an upper electrode disposed on the chuck stage, an AC power supply which applies first to third signals having different magnitudes of frequencies to the upper electrode or the lower electrode, a dielectric ring which surrounds the chuck stage, an edge electrode located within the dielectric ring, and a resonance circuit connected to the edge electrode. The resonance circuit includes a filter circuit which allows only the third signal among the first to third signals to pass, and a series resonance circuit connected in series with the filter circuit and having a first coil and a first variable capacitor connected in series and grounded.

公开(公告)号：US20230044703A1

公开(公告)日：2023-02-09

申请号：US17972798

申请日：2022-10-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNG BO SHIM ,  DOUG YONG SUNG ,  YOUNG JIN NOH ,  YONG WOO LEE ,  JI SOO IM ,  HYEONG MO KANG ,  PETER BYUNG H HAN ,  CHEON KYU LEE ,  MASATO HORIGUCHI

IPC: H01J37/32 ,  H01L21/683 ,  H03H7/38 ,  H03H7/01 ,  H01L21/67

Abstract: Plasma processing equipment includes a chuck stage for supporting a wafer and including a lower electrode, an upper electrode disposed on the chuck stage, an AC power supply which applies first to third signals having different magnitudes of frequencies to the upper electrode or the lower electrode, a dielectric ring which surrounds the chuck stage, an edge electrode located within the dielectric ring, and a resonance circuit connected to the edge electrode. The resonance circuit includes a filter circuit which allows only the third signal among the first to third signals to pass, and a series resonance circuit connected in series with the filter circuit and having a first coil and a first variable capacitor connected in series and grounded.

公开(公告)号：US20210142985A1

公开(公告)日：2021-05-13

申请号：US16915437

申请日：2020-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： AKIRA KOSHIISHI ,  MASATO HORIGUCHI ,  YONGWOO LEE ,  KYOHYEOK KIM ,  DOWON KIM ,  YUNHWAN KIM ,  YOUNGJIN NOH ,  JONGWOO SUN ,  TAEIL CHO

IPC: H01J37/32 ,  H01L21/683

Abstract: A plasma processing apparatus includes a chamber, a lower and upper electrodes vertically spaced apart from each other in the chamber, a RF transmitting part connected to the lower electrode and configured to supply RF power to the lower electrode, a ground plate spaced downwardly from the lower electrode, and an insulating member laterally surrounding a cavity formed between the lower electrode and the ground plate. The cavity is isolated from a region under the ground plate by the ground plate.