公开(公告)号：US20210142985A1

公开(公告)日：2021-05-13

申请号：US16915437

申请日：2020-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： AKIRA KOSHIISHI ,  MASATO HORIGUCHI ,  YONGWOO LEE ,  KYOHYEOK KIM ,  DOWON KIM ,  YUNHWAN KIM ,  YOUNGJIN NOH ,  JONGWOO SUN ,  TAEIL CHO

IPC: H01J37/32 ,  H01L21/683

Abstract: A plasma processing apparatus includes a chamber, a lower and upper electrodes vertically spaced apart from each other in the chamber, a RF transmitting part connected to the lower electrode and configured to supply RF power to the lower electrode, a ground plate spaced downwardly from the lower electrode, and an insulating member laterally surrounding a cavity formed between the lower electrode and the ground plate. The cavity is isolated from a region under the ground plate by the ground plate.

公开(公告)号：US20210057193A1

公开(公告)日：2021-02-25

申请号：US17091433

申请日：2020-11-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANG KI NAM ,  SUNGGIL KANG ,  SUNGYONG LIM ,  BEOMJIN YOO ,  AKIRA KOSHIISHI ,  VASILY PASHKOVSKIY ,  KWANGYOUB HEO

IPC: H01J37/32 ,  H01J1/02

Abstract: A hollow cathode includes an insulation plate having cathode holes. Bottom electrodes are below the insulation plate. The bottom electrodes define first holes having a width greater than a width of the cathode holes. Top electrodes are at an opposite side of the insulation plate from the bottom electrodes. The top electrodes define second holes aligned with the first holes along a direction orthogonal to the upper surface of the insulation plate.