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1.发明公开公开(公告)号：US20240318039A1
公开(公告)日：2024-09-26
申请号：US18603614
申请日：2024-03-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yearin BYUN , Inkwon KIM , Sanghyun PARK
IPC: C09G1/04 , H01L21/3205 , H01L21/321
CPC classification number: C09G1/04 , H01L21/3212 , H01L21/32051
Abstract: Provided is a chemical mechanical polishing slurry used for chemical mechanical polishing of a metal layer. The chemical mechanical polishing slurry may include deionized water, abrasive particles, and an aqueous solution including a temperature-sensitive oxidizing agent configured to control both the static etch rate and removal rate of the metal layer in a chemical mechanical polishing process when the polishing temperature of the chemical mechanical polishing process is 10° C. to 75° C.
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公开(公告)号：US20210403756A1
公开(公告)日：2021-12-30
申请号：US17354403
申请日：2021-06-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Inkwon KIM , Yearin BYUN , Boyun KIM , Seungho PARK , Hyosan LEE
IPC: C09G1/02
Abstract: A slurry composition for a chemical mechanical polishing (CMP) process, the slurry composition including an organic polishing booster including an iminium cation; a carrier; and optionally including inorganic polishing particles, wherein, when included, the inorganic polishing particles are included in the slurry composition in an amount of less than 0.1% by weight, based on a total weight of the slurry composition.
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公开(公告)号：US20240189960A1
公开(公告)日：2024-06-13
申请号：US18219222
申请日：2023-07-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yearin BYUN , Inkwon KIM , Sangkyun KIM
Abstract: A membrane coating compound for a chemical mechanical polishing process, a membrane structure for a chemical mechanical polishing process, and a polishing apparatus for a chemical mechanical polishing process in which a wafer is holdable under pressure on the polishing apparatus, the membrane coating compound includes a functional group capable of hydrogen bonding.
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