公开(公告)号：US20240189960A1

公开(公告)日：2024-06-13

申请号：US18219222

申请日：2023-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yearin BYUN ,  Inkwon KIM ,  Sangkyun KIM

IPC: B24B37/24 ,  B24B37/22

CPC classification number: B24B37/24 ,  B24B37/22

Abstract: A membrane coating compound for a chemical mechanical polishing process, a membrane structure for a chemical mechanical polishing process, and a polishing apparatus for a chemical mechanical polishing process in which a wafer is holdable under pressure on the polishing apparatus, the membrane coating compound includes a functional group capable of hydrogen bonding.

公开(公告)号：US20230332015A1

公开(公告)日：2023-10-19

申请号：US18096231

申请日：2023-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Inkwon KIM ,  Yearin Byun ,  Sangkyun KIM ,  Boun YOON ,  Hyosan LEE

IPC: H01L21/768 ,  C09G1/02 ,  C09G1/04 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09G1/04 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76843

Abstract: A slurry composition for polishing metal and a method of manufacturing an integrated circuit device, the slurry composition includes a first organic polishing booster including a cationic polymer salt that includes a quaternary ammonium cation; a second organic polishing booster including an organic acid; an oxidizer; a pH adjuster; 0 wt% to about 0.1 wt% of an inorganic abrasive; and water.

公开(公告)号：US20190157279A1

公开(公告)日：2019-05-23

申请号：US16237913

申请日：2019-01-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngbeom PYON ,  Kichul PARK ,  Inkwon KIM ,  Ki Hoon JANG ,  Byoungho KWON ,  Sangkyun KIM ,  Boun YOON

IPC: H01L27/112 ,  H01L23/535 ,  H01L23/528 ,  H01L27/11582 ,  H01L27/11575 ,  H01L27/11573 ,  H01L27/1157 ,  H01L27/11565 ,  H01L27/11551 ,  H01L27/11578

CPC classification number: H01L27/11286 ,  H01L21/02107 ,  H01L21/76801 ,  H01L21/76819 ,  H01L23/528 ,  H01L23/535 ,  H01L23/538 ,  H01L27/112 ,  H01L27/11551 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582

Abstract: A semiconductor device includes a substrate, a peripheral structure, a lower insulating layer, and a stack. The substrate includes a peripheral circuit region and a cell array region. The peripheral structure is on the peripheral circuit region. The lower insulating layer covers the peripheral circuit region and the cell array region and has a protruding portion protruding from a flat portion. The stack is on the lower insulating layer and the cell array region, and includes upper conductive patterns and insulating patterns which are alternately and repeatedly stacked.

公开(公告)号：US20210403756A1

公开(公告)日：2021-12-30

申请号：US17354403

申请日：2021-06-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Inkwon KIM ,  Yearin BYUN ,  Boyun KIM ,  Seungho PARK ,  Hyosan LEE

IPC: C09G1/02

Abstract: A slurry composition for a chemical mechanical polishing (CMP) process, the slurry composition including an organic polishing booster including an iminium cation; a carrier; and optionally including inorganic polishing particles, wherein, when included, the inorganic polishing particles are included in the slurry composition in an amount of less than 0.1% by weight, based on a total weight of the slurry composition.

公开(公告)号：US20240318039A1

公开(公告)日：2024-09-26

申请号：US18603614

申请日：2024-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yearin BYUN ,  Inkwon KIM ,  Sanghyun PARK

IPC: C09G1/04 ,  H01L21/3205 ,  H01L21/321

CPC classification number: C09G1/04 ,  H01L21/3212 ,  H01L21/32051

Abstract: Provided is a chemical mechanical polishing slurry used for chemical mechanical polishing of a metal layer. The chemical mechanical polishing slurry may include deionized water, abrasive particles, and an aqueous solution including a temperature-sensitive oxidizing agent configured to control both the static etch rate and removal rate of the metal layer in a chemical mechanical polishing process when the polishing temperature of the chemical mechanical polishing process is 10° C. to 75° C.