公开(公告)号：US10804145B2

公开(公告)日：2020-10-13

申请号：US16545150

申请日：2019-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeong Gil Kim ,  Han Seong Kim ,  Jong Min Baek ,  Ji Young Kim ,  Sung Bin Park ,  Deok Young Jung ,  Kyu Hee Han

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/311 ,  H01L21/02 ,  H01L23/522

Abstract: A method of fabricating a semiconductor device is provided. The method may include forming a first interlayer insulating film on a substrate, forming a second interlayer insulating film on the first interlayer insulating film, and forming a third interlayer insulating film on the second interlayer insulating film. Different amounts of carbon may be present in each of the first, second, and third interlayer insulating films. The third interlayer insulating film may be used as a mask pattern to form a via trench that extends at least partially into the first interlayer insulating film and the second interlayer insulating film. Supplying a carbon precursor may be interrupted between the forming of the second and third interlayer insulating films, such that the second interlayer insulating film and the third interlayer insulating film may have a discontinuous boundary therebetween.

公开(公告)号：US20200227314A1

公开(公告)日：2020-07-16

申请号：US16545150

申请日：2019-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeong Gil Kim ,  Han Seong Kim ,  Jong Min Baek ,  Ji Young Kim ,  Sung Bin Park ,  Deok Young Jung ,  Kyu Hee Han

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311

Abstract: A method of fabricating a semiconductor device is provided. The method may include forming a first interlayer insulating film on a substrate, forming a second interlayer insulating film on the first interlayer insulating film, and forming a third interlayer insulating film on the second interlayer insulating film. Different amounts of carbon may be present in each of the first, second, and third interlayer insulating films. The third interlayer insulating film may be used as a mask pattern to form a via trench that extends at least partially into the first interlayer insulating film and the second interlayer insulating film. Supplying a carbon precursor may be interrupted between the forming of the second and third interlayer insulating films, such that the second interlayer insulating film and the third interlayer insulating film may have a discontinuous boundary therebetween.

公开(公告)号：US20230083747A1

公开(公告)日：2023-03-16

申请号：US17931873

申请日：2022-09-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ja Yeong Heo ,  Yeong Gil Kim ,  Woo Jin Lee

IPC: H01L23/532 ,  H01L23/522 ,  H01L23/528

Abstract: A semiconductor device is provided. A semiconductor device includes: a lower metal layer including first, second, and third conductive patterns spaced apart from each other in a first insulating film; first and second interlayer insulating films between the first and second conductive patterns and between the second and third conductive patterns, respectively, so as to be spaced apart from each other; a via metal layer inside a recess on the lower metal layer and electrically connected to the lower metal layer; and a second insulating film at least partially surrounding side surfaces of the via metal layer and having a first insulating film portion on a concave portion between the first and second interlayer insulating films and a second insulating film portion on the first insulating film portion, wherein a carbon concentration in the first insulating film portion is higher than a carbon concentration in the second insulating film portion.

公开(公告)号：US10825766B2

公开(公告)日：2020-11-03

申请号：US16285583

申请日：2019-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Young Kim ,  Kyu Hee Han ,  Sung Bin Park ,  Yeong Gil Kim ,  Jong Min Baek ,  Kyoung Woo Lee ,  Deok Young Jung

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768 ,  H01L21/311

Abstract: A semiconductor device includes a lower wiring, an interlayer insulation film above the lower wiring and including a first portion having a first density, and a second portion on the first portion, the first portion and the second portion having a same material, and the second portion having a second density smaller than the first density, an upper wiring in the second portion of the interlayer insulating film, and a via in the first portion of the interlayer insulating film, the via connecting the upper wiring and the lower wiring.