公开(公告)号：US10901007B2

公开(公告)日：2021-01-26

申请号：US16261175

申请日：2019-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Do Kim ,  Sung Yong Lim ,  Chan Soo Kang ,  Do Hoon Kwon ,  Min Ju Kim ,  Sang Ki Nam ,  Jung Mo Yang ,  Jong Hun Pi ,  Kyu Hee Han

IPC: G01R15/18 ,  H05H1/46 ,  H01F27/28 ,  G01R15/16

Abstract: An RF sensing apparatus configured for use with a plasma processing chamber includes a penetration unit opened in an up/down direction, a main return path unit surrounding all or a portion of the penetration unit, and a secondary return path unit located between the penetration unit and the main return path unit, spaced apart from the main return path unit, and surrounding all or a portion of the penetration unit. The main return path unit and the secondary return path unit include a path through which a current flows in one of the up/down directions.

公开(公告)号：US10062609B2

公开(公告)日：2018-08-28

申请号：US15393506

申请日：2016-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo Kyung You ,  Jong Min Baek ,  Sang Shin Jang ,  Byung Hee Kim ,  Vietha Nguyen ,  Nae In Lee ,  Woo Jin Lee ,  Eun Ji Jung ,  Kyu Hee Han

IPC: H01L21/00 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L21/76883 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/53295 ,  H01L2221/1021

Abstract: A semiconductor device includes a first insulating interlayer on a substrate, metal lines in the first insulating interlayer, a first air gap between the metal lines in a first region of the substrate and a second air gap between the first insulating interlayer and at least one of the metal lines in a second region of the substrate, a liner layer covering top surfaces and side walls of the metal lines and a top surface and a side wall of the first insulating interlayer, adjacent to the first and second air gaps, and a second insulating interlayer on the liner layer and contacting the liner layer.

公开(公告)号：US11664242B2

公开(公告)日：2023-05-30

申请号：US17381246

申请日：2021-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Beom Jin Yoo ,  Min Hyoung Kim ,  Sang Ki Nam ,  Won Hyuk Jang ,  Kyu Hee Han ,  Young Do Kim ,  Jeong Min Bang

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/67051 ,  H01J37/32541 ,  H01J37/32559 ,  H01J37/32568 ,  H01L21/02057 ,  H01L21/67017 ,  H01L21/67253 ,  H01J2237/335 ,  H01L21/02068

Abstract: A cleaning solution production system is for cleaning a semiconductor substrate. The system includes a pressure tank, a plasma reaction tank configured to form a plasma in gas bubbles suspended in a decompressed liquid obtained from the pressure tank to thereby generate radical species in the decompressed liquid, a storage tank configured to store a cleaning solution containing the radical species generated in the plasma reaction tank, and a nozzle configured to supply the cleaning solution from the storage tank to a semiconductor substrate.

公开(公告)号：US10804145B2

公开(公告)日：2020-10-13

申请号：US16545150

申请日：2019-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeong Gil Kim ,  Han Seong Kim ,  Jong Min Baek ,  Ji Young Kim ,  Sung Bin Park ,  Deok Young Jung ,  Kyu Hee Han

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/311 ,  H01L21/02 ,  H01L23/522

Abstract: A method of fabricating a semiconductor device is provided. The method may include forming a first interlayer insulating film on a substrate, forming a second interlayer insulating film on the first interlayer insulating film, and forming a third interlayer insulating film on the second interlayer insulating film. Different amounts of carbon may be present in each of the first, second, and third interlayer insulating films. The third interlayer insulating film may be used as a mask pattern to form a via trench that extends at least partially into the first interlayer insulating film and the second interlayer insulating film. Supplying a carbon precursor may be interrupted between the forming of the second and third interlayer insulating films, such that the second interlayer insulating film and the third interlayer insulating film may have a discontinuous boundary therebetween.

公开(公告)号：US11545372B2

公开(公告)日：2023-01-03

申请号：US16421473

申请日：2019-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beom Jin Yoo ,  Min Hyoung Kim ,  Sang Ki Nam ,  Lu Siqing ,  Won Hyuk Jang ,  Kyu Hee Han

IPC: H01L21/67 ,  H01L21/687 ,  B08B3/10

Abstract: A plasma generator, a cleaning liquid processing apparatus including the same, a semiconductor cleaning apparatus, and a cleaning liquid processing method are provided. The cleaning liquid processing apparatus comprising a bubble formation section configured to lower a pressure of a mixed liquid obtained by mixing a liquid and a gas to form bubbles in the mixed liquid, a plasma generator connected to the bubble formation section and configured to apply a voltage to the mixed liquid to form plasma in the bubbles formed in the mixed liquid, a mixing section connected to the plasma generator and configured to dissolve radicals included in the plasma into the mixed liquid, and a discharge nozzle connected to the mixing section and configured to discharge the mixed liquid to a wafer.

公开(公告)号：US11107705B2

公开(公告)日：2021-08-31

申请号：US16505488

申请日：2019-07-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Beom Jin Yoo ,  Min Hyoung Kim ,  Sang Ki Nam ,  Won Hyuk Jang ,  Kyu Hee Han ,  Young Do Kim ,  Jeong Min Bang

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/02

Abstract: A cleaning solution production system is for cleaning a semiconductor substrate. The system includes a pressure tank, a plasma reaction tank configured to form a plasma in gas bubbles suspended in a decompressed liquid obtained from the pressure tank to thereby generate radical species in the decompressed liquid, a storage tank configured to store a cleaning solution containing the radical species generated in the plasma reaction tank, and a nozzle configured to supply the cleaning solution from the storage tank to a semiconductor substrate.

公开(公告)号：US10825766B2

公开(公告)日：2020-11-03

申请号：US16285583

申请日：2019-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Young Kim ,  Kyu Hee Han ,  Sung Bin Park ,  Yeong Gil Kim ,  Jong Min Baek ,  Kyoung Woo Lee ,  Deok Young Jung

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768 ,  H01L21/311

Abstract: A semiconductor device includes a lower wiring, an interlayer insulation film above the lower wiring and including a first portion having a first density, and a second portion on the first portion, the first portion and the second portion having a same material, and the second portion having a second density smaller than the first density, an upper wiring in the second portion of the interlayer insulating film, and a via in the first portion of the interlayer insulating film, the via connecting the upper wiring and the lower wiring.

公开(公告)号：US10832948B2

公开(公告)日：2020-11-10

申请号：US16854979

申请日：2020-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyu Hee Han ,  Jong Min Baek ,  Viet Ha Nguyen ,  Woo Kyung You ,  Sang Shin Jang ,  Byung Hee Kim

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/311 ,  H01L23/528

Abstract: A semiconductor device includes a first interlayer dielectric film on a substrate, first and second wires respectively extending in a first direction within the first interlayer dielectric film, the first and second wires being adjacent to each other in a second direction different from the first direction, a hard mask pattern on the first interlayer dielectric film, the hard mask pattern including an opening, and an air gap within the first interlayer dielectric film, the air gap including a first portion overlapping vertically with the opening and a second portion not overlapping with the opening in the first direction.

公开(公告)号：US20200227314A1

公开(公告)日：2020-07-16

申请号：US16545150

申请日：2019-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeong Gil Kim ,  Han Seong Kim ,  Jong Min Baek ,  Ji Young Kim ,  Sung Bin Park ,  Deok Young Jung ,  Kyu Hee Han

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311

Abstract: A method of fabricating a semiconductor device is provided. The method may include forming a first interlayer insulating film on a substrate, forming a second interlayer insulating film on the first interlayer insulating film, and forming a third interlayer insulating film on the second interlayer insulating film. Different amounts of carbon may be present in each of the first, second, and third interlayer insulating films. The third interlayer insulating film may be used as a mask pattern to form a via trench that extends at least partially into the first interlayer insulating film and the second interlayer insulating film. Supplying a carbon precursor may be interrupted between the forming of the second and third interlayer insulating films, such that the second interlayer insulating film and the third interlayer insulating film may have a discontinuous boundary therebetween.

公开(公告)号：US10658231B2

公开(公告)日：2020-05-19

申请号：US15612102

申请日：2017-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyu Hee Han ,  Jong Min Baek ,  Viet Ha Nguyen ,  Woo Kyung You ,  Sang Shin Jang ,  Byung Hee Kim

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522 ,  H01L21/311 ,  H01L23/528

Abstract: A semiconductor device includes a first interlayer dielectric film on a substrate, first and second wires respectively extending in a first direction within the first interlayer dielectric film, the first and second wires being adjacent to each other in a second direction different from the first direction, a hard mask pattern on the first interlayer dielectric film, the hard mask pattern including an opening, and an air gap within the first interlayer dielectric film, the air gap including a first portion overlapping vertically with the opening and a second portion not overlapping with the opening in the first direction.