公开(公告)号：US20190221600A1

公开(公告)日：2019-07-18

申请号：US16175097

申请日：2018-10-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Sun Oh ,  Yi-Tae Kim ,  Yu-Jung Choi

IPC: H01L27/146 ,  H04N5/357

Abstract: A pixel array in an image sensor includes a first pixel group. The first pixel group includes unit pixels that include photoelectric conversion units and a first signal generation unit shared by the photoelectric conversion units. The first signal generation unit includes transfer transistors connected to the photoelectric conversion units, respectively, a first floating diffusion node connected to the transfer transistors, a plurality of driving transistors connected to the first floating diffusion node and connected in parallel with one another, and a plurality of selection transistors connected in parallel between a first output terminal and the plurality of driving transistors. The first output terminal outputs pixel signals that correspond to photo charges collected by the photoelectric conversion units, respectively. A number of the plurality of selection transistors is equal to a number of the plurality of driving transistors.

公开(公告)号：US09443898B2

公开(公告)日：2016-09-13

申请号：US14595336

申请日：2015-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sun Oh ,  Yi-Tae Kim ,  Jung-Chak Ahn ,  Kyung-Ho Lee ,  Jun-Suk Lee

IPC: H01L29/49 ,  H01L27/146 ,  H04N5/357 ,  H04N5/3745

CPC classification number: H01L27/14641 ,  H01L27/14603 ,  H04N5/357 ,  H04N5/3745 ,  H04N5/37457

Abstract: An image sensor includes first pixels and a first source follower transistor, which are disposed adjacent to each other in a first pixel area in a column direction, and second pixels and a second source follower transistor, which are formed in a second pixel area adjacent to the first pixel area in a row direction by the same number of the first pixels, wherein when the first pixels share the first source follower transistor and the second pixels share the second source follower transistor, while pixels selected from the same row are activated, the first source follower transistor and the second source follower transistor being activated are disposed so that locations thereof have a diagonal symmetry.

Abstract translation: 图像传感器包括在列方向上的第一像素区域中彼此相邻布置的第一像素和第一源极跟随器晶体管，以及第二像素和第二源极跟随器晶体管，其形成在与第二像素区域相邻的第二像素区域中 第一像素区域在行方向上具有相同数量的第一像素，其中当第一像素共享第一源极跟随器晶体管并且第二像素共享第二源极跟随器晶体管时，当从相同行选择的像素被激活时， 第一源极跟随器晶体管和第二源极跟随器晶体管被激活，使得它们的位置具有对角对称性。

公开(公告)号：US20150243701A1

公开(公告)日：2015-08-27

申请号：US14478374

申请日：2014-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sun Oh ,  Kyung-Ho Lee ,  Hee-Geun Jeong

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14689

Abstract: Complementary metal-oxide-semiconductor (CMOS) image sensors are provided. A CMOS image sensor includes a substrate including a pixel array and a peripheral circuit region, a photodiode and a floating diffusion region in the pixel array of the substrate, a transfer gate insulating layer and a transfer gate electrode on the substrate between the photodiode and the floating diffusion region, and a peripheral gate insulating layer and a peripheral gate electrode on the peripheral circuit region. The transfer gate electrode includes a first edge that is rounded to have a first radius of curvature, and the peripheral gate electrode includes a second edge that is rounded to have a second radius of curvature smaller than the first radius of curvature.

Abstract translation: 提供了互补金属氧化物半导体（CMOS）图像传感器。 CMOS图像传感器包括在基板的像素阵列中的像素阵列和外围电路区域，光电二极管和浮动扩散区域的基板，基板上的传输栅极绝缘层和传输栅极电极之间的光电二极管和 浮动扩散区域，外围栅极绝缘层和周边栅极电极。 传输栅极包括圆形以具有第一曲率半径的第一边缘，并且外围栅电极包括圆形的第二边缘以具有小于第一曲率半径的第二曲率半径。

公开(公告)号：US09806113B2

公开(公告)日：2017-10-31

申请号：US15477148

申请日：2017-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sun Oh ,  Kyung-Ho Lee ,  Jung-Chak Ahn ,  Hee-Geun Jeong

IPC: H01L27/14 ,  H01L27/146 ,  H01L31/02

CPC classification number: H01L27/14614 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/02016

Abstract: Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.

公开(公告)号：US09647016B2

公开(公告)日：2017-05-09

申请号：US14340719

申请日：2014-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sun Oh ,  Kyung-Ho Lee ,  Jung-Chak Ahn ,  Hee-Geun Jeong

IPC: H01L27/14 ,  H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/02016

Abstract: Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.

公开(公告)号：US09543349B2

公开(公告)日：2017-01-10

申请号：US14478374

申请日：2014-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sun Oh ,  Kyung-Ho Lee ,  Hee-Geun Jeong

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14689

Abstract: Complementary metal-oxide-semiconductor (CMOS) image sensors are provided. A CMOS image sensor includes a substrate including a pixel array and a peripheral circuit region, a photodiode and a floating diffusion region in the pixel array of the substrate, a transfer gate insulating layer and a transfer gate electrode on the substrate between the photodiode and the floating diffusion region, and a peripheral gate insulating layer and a peripheral gate electrode on the peripheral circuit region. The transfer gate electrode includes a first edge that is rounded to have a first radius of curvature, and the peripheral gate electrode includes a second edge that is rounded to have a second radius of curvature smaller than the first radius of curvature.

Abstract translation: 提供了互补金属氧化物半导体（CMOS）图像传感器。 CMOS图像传感器包括在基板的像素阵列中的像素阵列和外围电路区域，光电二极管和浮动扩散区域的基板，基板上的传输栅极绝缘层和传输栅极电极之间的光电二极管和 浮动扩散区域，外围栅极绝缘层和周边栅极电极。 传输栅极包括圆形以具有第一曲率半径的第一边缘，并且外围栅电极包括圆形的第二边缘以具有小于第一曲率半径的第二曲率半径。

公开(公告)号：US10573682B2

公开(公告)日：2020-02-25

申请号：US16175097

申请日：2018-10-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Sun Oh ,  Yi-Tae Kim ,  Yu-Jung Choi

IPC: H04N3/14 ,  H04N5/335 ,  H01L27/146 ,  H04N5/357

Abstract: A pixel array in an image sensor includes a first pixel group. The first pixel group includes unit pixels that include photoelectric conversion units and a first signal generation unit shared by the photoelectric conversion units. The first signal generation unit includes transfer transistors connected to the photoelectric conversion units, respectively, a first floating diffusion node connected to the transfer transistors, a plurality of driving transistors connected to the first floating diffusion node and connected in parallel with one another, and a plurality of selection transistors connected in parallel between a first output terminal and the plurality of driving transistors. The first output terminal outputs pixel signals that correspond to photo charges collected by the photoelectric conversion units, respectively. A number of the plurality of selection transistors is equal to a number of the plurality of driving transistors.

公开(公告)号：US20150333091A1

公开(公告)日：2015-11-19

申请号：US14595336

申请日：2015-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sun Oh ,  Yi-Tae Kim ,  Jung-Chak Ahn ,  Kyung-Ho Lee ,  Jun-Suk Lee

IPC: H01L27/146

CPC classification number: H01L27/14641 ,  H01L27/14603 ,  H04N5/357 ,  H04N5/3745 ,  H04N5/37457

Abstract: An image sensor includes first pixels and a first source follower transistor, which are disposed adjacent to each other in a first pixel area in a column direction, and second pixels and a second source follower transistor, which are formed in a second pixel area adjacent to the first pixel area in a row direction by the same number of the first pixels, wherein when the first pixels share the first source follower transistor and the second pixels share the second source follower transistor, while pixels selected from the same row are activated, the first source follower transistor and the second source follower transistor being activated are disposed so that locations thereof have a diagonal symmetry.

Abstract translation: 图像传感器包括在列方向上的第一像素区域中彼此相邻布置的第一像素和第一源极跟随器晶体管，以及第二像素和第二源极跟随器晶体管，其形成在与第二像素区域相邻的第二像素区域中 第一像素区域在行方向上具有相同数量的第一像素，其中当第一像素共享第一源极跟随器晶体管并且第二像素共享第二源极跟随器晶体管时，当从相同行选择的像素被激活时， 第一源极跟随器晶体管和第二源极跟随器晶体管被激活，使得它们的位置具有对角对称性。

公开(公告)号：US20150243693A1

公开(公告)日：2015-08-27

申请号：US14340719

申请日：2014-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sun Oh ,  Kyung-Ho Lee ,  Jung-Chak Ahn ,  Hee-Geun Jeong

IPC: H01L27/146 ,  H01L29/778

CPC classification number: H01L27/14614 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/02016

Abstract: Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.

Abstract translation: 提供了互补金属氧化物半导体（CMOS）图像传感器。 CMOS图像传感器可以包括具有限定和分割第一有源区和第二有源区的第一器件隔离层的衬底，设置在衬底中的光电二极管，并且可以被配置为与第一器件隔离层垂直重叠，传输栅电极 可以设置在第一有源区中并且可以被配置为垂直地重叠光电二极管，并且浮动扩散区可以在第一有源区中。 传输栅电极可以埋在衬底中。