公开(公告)号：US20180197719A1

公开(公告)日：2018-07-12

申请号：US15606025

申请日：2017-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yil-Hyung Lee ,  Yoo-Chul Kong ,  Jong-Kyu Kim ,  Seok-Woo Nam ,  Jong-Soon Park ,  Kyoung-Sub Shin

IPC: H01J37/32 ,  H01J37/34 ,  C23C14/34 ,  C23C14/50

CPC classification number: H01J37/32412 ,  H01J37/32422 ,  H01J37/3435 ,  H01J37/3438 ,  H01J2237/083 ,  H01J2237/334

Abstract: In an example embodiment a method of processing a substrate includes forming a plasma in a plasma chamber and using charged grids to form an ion beam and to thereby accelerate ions from the plasma chamber to a processing chamber. An auxiliary heater, which may be a radiant heater, may be used to pre-heat a grid to a saturation state to accelerate heating and concomitant distortion of the grid. A process recipe may pre-compensate for distortion of the grid.

公开(公告)号：US10410839B2

公开(公告)日：2019-09-10

申请号：US15606025

申请日：2017-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yil-Hyung Lee ,  Yoo-Chul Kong ,  Jong-Kyu Kim ,  Seok-Woo Nam ,  Jong-Soon Park ,  Kyoung-Sub Shin

IPC: H01L21/263 ,  H01J37/32 ,  H01J37/34

Abstract: In an example embodiment a method of processing a substrate includes forming a plasma in a plasma chamber and using charged grids to form an ion beam and to thereby accelerate ions from the plasma chamber to a processing chamber. An auxiliary heater, which may be a radiant heater, may be used to pre-heat a grid to a saturation state to accelerate heating and concomitant distortion of the grid. A process recipe may pre-compensate for distortion of the grid.

公开(公告)号：US20190272979A1

公开(公告)日：2019-09-05

申请号：US16413854

申请日：2019-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yil-Hyung Lee ,  Yoo-Chul Kong ,  Jong-Kyu Kim ,  Seok-Woo Nam ,  Jong-Soon Park ,  Kyoung-Sub Shin

IPC: H01J37/32 ,  H01J37/34

Abstract: In an example embodiment a method of processing a substrate includes forming a plasma in a plasma chamber and using charged grids to form an ion beam and to thereby accelerate ions from the plasma chamber to a processing chamber. An auxiliary heater, which may be a radiant heater, may be used to pre-heat a grid to a saturation state to accelerate heating and concomitant distortion of the grid. A process recipe may pre-compensate for distortion of the grid.

公开(公告)号：US09905754B1

公开(公告)日：2018-02-27

申请号：US15630046

申请日：2017-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hye-Ji Yoon ,  Yoo-Chul Kong ,  Jong-Kyu Kim ,  Sang-Kuk Kim ,  Yil-Hyung Lee

IPC: H01L43/12 ,  H01L27/22

CPC classification number: H01L43/12 ,  H01L27/222

Abstract: In a method of forming a pattern of a semiconductor device, a first mask layer and an anti-reflective coating layer may be sequentially formed on a substrate. A photoresist layer may be formed on the anti-reflective coating layer. The photoresist layer may be exposed and developed to form a first preliminary photoresist pattern. A first ion beam etching process may be performed on the first preliminary photoresist pattern to form a second preliminary photoresist pattern. A second ion beam etching process may be performed on the second preliminary photoresist pattern to form a photoresist pattern. A second incident angle of an ion beam in the second ion beam etching process may be greater than a first incident angle of an ion beam in the first ion beam etching process. The anti-reflective coating layer and the first mask layer may be etched using the photoresist pattern as an etching mask to form a mask structure.