公开(公告)号：US20220093642A1

公开(公告)日：2022-03-24

申请号：US17540688

申请日：2021-12-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Yeoung CHOI ,  Hyung Joon KIM ,  Su Hyeong LEE ,  Yong Seok CHO

IPC: H01L27/11582 ,  H01L27/11556

Abstract: A semiconductor device includes a plurality of first gate electrodes sequentially stacked on a substrate, a second gate electrode on the plurality of first gate electrodes, a first channel structure extending through the plurality of first gate electrodes and a portion of the second gate electrode, a buried insulation pattern on a sidewall of the first channel structure, of which an upper surface is at a higher level than a top end of the first channel structure, a second channel structure extending through a remainder of the second gate electrode, the second channel structure connected to the first channel structure, and a buried conductive pattern on a sidewall of the second channel structure.

公开(公告)号：US20180315621A1

公开(公告)日：2018-11-01

申请号：US15791795

申请日：2017-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Seok CHO ,  Hyung Joon KIM ,  Jung Ho KIM ,  Joong Yun RA ,  Bi O KIM ,  Jae Young AHN ,  Ki Yong OH ,  Sung Hae LEE

IPC: H01L21/56 ,  H01L21/8239 ,  H01L21/768 ,  H01L21/28 ,  H01L21/8234

CPC classification number: H01L21/565 ,  H01L21/28088 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/823437 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/8239 ,  H01L27/10876 ,  H01L27/11582 ,  H01L29/40117

Abstract: A method for fabricating a semiconductor device, the method including forming a mold structure on a substrate such that the mold structure includes alternately and repeatedly stacked interlayer insulating films and sacrificial films; forming a channel hole passing through the mold structure; forming a vertical channel structure within the channel hole; exposing a surface of the interlayer insulating films by removing the sacrificial films; forming an aluminum oxide film along a surface of the interlayer insulating films; forming a continuous film on the aluminum oxide film; and nitriding the continuous film to form a TiN film.