公开(公告)号：US09465320B1

公开(公告)日：2016-10-11

申请号：US14924824

申请日：2015-10-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Sung Kim

IPC: G03G15/08

CPC classification number: G03G15/0891 ,  G03G15/0879

Abstract: A developer supplier for delivering a developer in a supply pipe having a multi-curvature structure is provided. The developer supplier includes a rotation shaft including a rigid first rotation shaft. The developer supplier includes a flexible second rotation shaft that has a smaller bending strength than the first rotation shaft, and is connected to the first rotation shaft, and a spiral wing formed around the rotation shaft, and at least a portion of the spiral wing formed around the second rotation shaft is flexible.

Abstract translation: 提供了一种用于在具有多曲率结构的供应管中输送显影剂的开发商供应商。 显影剂供应商包括具有刚性第一旋转轴的旋转轴。 显影剂供应商包括柔性的第二旋转轴，该第二旋转轴具有比第一旋转轴更小的弯曲强度，并且连接到第一旋转轴，以及围绕旋转轴形成的螺旋翼，并且形成螺旋翼的至少一部分 围绕第二旋转轴是灵活的。

公开(公告)号：US09099325B2

公开(公告)日：2015-08-04

申请号：US14109517

申请日：2013-12-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Sung Kim ,  Tae-Young Chung ,  Soo-Ho Shin

IPC: H01L29/76 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L27/088

CPC classification number: H01L21/28123 ,  H01L21/76224 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/10826 ,  H01L27/10879 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/4238 ,  H01L29/66795 ,  H01L29/7802 ,  H01L29/7827 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7853

Abstract: A method of manufacturing a semiconductor device which can prevent leakage current caused by gate electrodes intersecting element isolation layers in a major axis of an active region, and which further has vertical channels to provide a sufficient overlap margin, and a semiconductor device manufactured using the above method. The device includes gate electrodes formed on element isolation layers that are disposed between active regions and have top surfaces that are higher than the top surfaces of the active regions. Since the gate electrodes are formed on the element isolation layers, leakage current in a semiconductor substrate is prevented. In addition, the gate electrodes are formed using a striped shape mask pattern, thereby obtaining a sufficient overlap margin compared to a contact shape or bar shape pattern.