公开(公告)号：US20230042905A1

公开(公告)日：2023-02-09

申请号：US17704465

申请日：2022-03-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongchul JEONG ,  Sangjin KIM ,  Yigwon KIM ,  Kyeongbeom PARK ,  Suhyun BARK ,  Sangshin JANG ,  Jinhee JANG ,  Cheolin JANG ,  Tae Min CHOI

IPC: H01L21/768 ,  H01L21/027 ,  H01L21/311

Abstract: A method of fabricating a semiconductor device is disclosed. The method may include forming an etch-target layer, a mask layer, a blocking layer, and a photoresist layer, which are sequentially stacked on a substrate; forming a photoresist pattern, the forming the photoresist pattern including irradiating the photoresist layer with extreme ultraviolet (EUV) light; forming a mask layer, the forming the mask layer including etching the mask layer using the photoresist pattern as an etch mask; and forming a target pattern, the forming the target pattern including etching the etch-target layer using the mask pattern as an etch mask. The photoresist layer may include an organic metal oxide. The blocking layer may be a non-polar layer and may limit and/or prevent a metallic element in the photoresist layer from infiltrating into the mask layer.

公开(公告)号：US20230036420A1

公开(公告)日：2023-02-02

申请号：US17697019

申请日：2022-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongchul JEONG ,  Sangjin KIM ,  Yigwon KIM ,  Jinhee JANG ,  Taemin CHOI

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/02 ,  G03F7/20

Abstract: A method of forming a pattern includes forming an etching object layer on a substrate. A photoresist layer including a metal, oxygen and an organic material is formed on the etching object layer. An exposure process is performed on the photoresist layer. A developing process is performed on the photoresist layer to form a photoresist pattern including a metal oxide. Ozone is provided onto the substrate to remove a residue of the photoresist layer that includes the organic material, The etching object layer is etched using the photoresist pattern as an etching mask.