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1.发明申请公开(公告)号：US20190304565A1
公开(公告)日：2019-10-03
申请号：US16283650
申请日：2019-02-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung-Ryun KIM , Yoon-Na OH , Hyung-Jin KIM , Hui-Kap YANG , Jang-Woo RYU
Abstract: A method includes replacing an address of a first normal memory cell in a first column of a first memory block with a destination address that is an address of a second normal memory cell in a second column of the first memory block, and reassigning the address of the second normal memory cell in the second column of the first memory block to an address of a first redundancy memory cell in a redundancy block of the memory device.
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2.发明申请公开(公告)号：US20220238178A1
公开(公告)日：2022-07-28
申请号：US17723200
申请日：2022-04-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung-Ryun KIM , Yoon-Na OH , Hyung-Jin KIM , Hui-Kap YANG , Jang-Woo RYU
Abstract: A method includes replacing an address of a first normal memory cell in a first column of a first memory block with a destination address that is an address of a second normal memory cell in a second column of the first memory block, and reassigning the address of the second normal memory cell in the second column of the first memory block to an address of a first redundancy memory cell in a redundancy block of the memory device.
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3.发明申请公开(公告)号：US20210233604A1
公开(公告)日：2021-07-29
申请号：US17216160
申请日：2021-03-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung-Ryun KIM , Yoon-Na OH , Hyung-Jin KIM , Hui-Kap YANG , Jang-Woo RYU
Abstract: A method includes replacing an address of a first normal memory cell in a first column of a first memory block with a destination address that is an address of a second normal memory cell in a second column of the first memory block, and reassigning the address of the second normal memory cell in the second column of the first memory block to an address of a first redundancy memory cell in a redundancy block of the memory device.
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