公开(公告)号：US12290778B2

公开(公告)日：2025-05-06

申请号：US17536048

申请日：2021-11-28

Applicant: Samsung Electronics Co., Ltd. ,  CSK Inc.

Inventor： Seo Young Maeng ,  Il Jun Jeon ,  Su Ji Gim ,  Jin Hong Kim ,  Young Seok Roh ,  Jong Yong Bae ,  Jung Joon Pyeon

IPC: B01D46/76 ,  B01D46/00 ,  B01D46/24 ,  B01D46/64 ,  B01D53/04 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02

Abstract: A method of fabricating a semiconductor device includes providing a wafer inside a process chamber, performing an ALD (atomic layer deposition) process inside the process chamber to deposit titanium nitride on the wafer, providing a process gas used for the ALD process to a scrubber, filtering a first powder contained in the process gas, using a filter unit disposed in the scrubber and including a plurality of filters, adsorbing a second powder remaining in the process gas after passing through the filter unit, using a fin structure extending in a vertical direction inside the filter unit, and exhausting the process gas, from which the first and second powders are removed, from the scrubber.

公开(公告)号：US11931683B2

公开(公告)日：2024-03-19

申请号：US17502463

申请日：2021-10-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Seok Roh ,  Suji Gim ,  Heesub Kim ,  Hee Ock Park ,  Jongyong Bae ,  Sung Chul Yoon ,  Sunsoo Lee ,  Dong Keun Jeon ,  Jinkyoung Joo

IPC: B01D47/06 ,  H01J37/32 ,  B08B9/08

CPC classification number: B01D47/06 ,  H01J37/32844 ,  B08B9/0813

Abstract: A scrubber system may include a scrubber housing including a vertically extended cleaning space, an inflow chamber coupled to a bottom portion of the scrubber housing, and first and second inflow portions, each of which is configured to supply a gas into the inflow chamber. The inflow chamber may include a mixing space, and the mixing space may be connected to the cleaning space. The first inflow portion may include a first connection pipe coupled to the inflow chamber to provide a first connection path and the second inflow portion may include a second connection pipe coupled to the inflow chamber to provide a second connection path. The first and second connection paths may be extended toward the mixing space in opposite directions, respectively, and may be connected to opposite portions of the mixing space, respectively.