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公开(公告)号：US11931683B2
公开(公告)日：2024-03-19
申请号：US17502463
申请日：2021-10-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Young Seok Roh , Suji Gim , Heesub Kim , Hee Ock Park , Jongyong Bae , Sung Chul Yoon , Sunsoo Lee , Dong Keun Jeon , Jinkyoung Joo
CPC classification number: B01D47/06 , H01J37/32844 , B08B9/0813
Abstract: A scrubber system may include a scrubber housing including a vertically extended cleaning space, an inflow chamber coupled to a bottom portion of the scrubber housing, and first and second inflow portions, each of which is configured to supply a gas into the inflow chamber. The inflow chamber may include a mixing space, and the mixing space may be connected to the cleaning space. The first inflow portion may include a first connection pipe coupled to the inflow chamber to provide a first connection path and the second inflow portion may include a second connection pipe coupled to the inflow chamber to provide a second connection path. The first and second connection paths may be extended toward the mixing space in opposite directions, respectively, and may be connected to opposite portions of the mixing space, respectively.
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公开(公告)号：US11660563B2
公开(公告)日：2023-05-30
申请号：US17380109
申请日：2021-07-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seoyoung Maeng , Iljun Jeon , Suji Gim , Youngseok Roh , Jongyong Bae , Jungjoon Pyeon
CPC classification number: B01D50/20 , B01D45/08 , B01D45/16 , B01D46/4263 , B01D46/48 , B01D2279/51
Abstract: An apparatus for collecting a by-product, includes: a chamber provided with a gas inlet and a gas outlet and having an internal space; a heater disposed on the gas inlet side of the internal space within the chamber and varying a heating temperature in time series; a vortex forming member disposed around the heater; a plurality of first collecting members disposed below the heater; a second collecting member disposed below the first collecting member so that a plurality of second collecting members intersect each other; and a third collecting member disposed on the gas outlet side of the internal space within the chamber.
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Patent Agency Ranking
3.发明公开公开(公告)号：US20240249925A1
公开(公告)日：2024-07-25
申请号：US18390956
申请日：2023-12-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： JAEHYUN KIM , Kookjin Ann , Suji Gim , Taijong Sung , Sunwoo Yook , Young Heo
IPC: H01J37/32
CPC classification number: H01J37/32844 , H01J37/32449 , H01J37/32623 , H01J37/32899 , H01J2237/327
Abstract: An exhaust gas processing apparatus includes a first chamber and a second chamber in parallel between a processing chamber and an exhaust pump, at least one foreline connecting the first chamber and the second chamber to the processing chamber and the exhaust pump, a first plasma source connected to the first chamber and the second chamber, and a second plasma source connected to the first chamber and the second chamber, wherein the first plasma source generates a first treatment material, and the second plasma source generates a second treatment material, different from the first treatment material.
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公开(公告)号：US20240124979A1
公开(公告)日：2024-04-18
申请号：US18227467
申请日：2023-07-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chan Kyu LIM , Yoonbon Koo , Hanhim Kang , Suji Gim , Jongkoo Lim
IPC: C23C16/455 , C23C16/52 , H10B41/27 , H10B43/27
CPC classification number: C23C16/45561 , C23C16/52 , H10B41/27 , H10B43/27
Abstract: The present disclosure provides methods and apparatuses for supplying a process gas in a semiconductor manufacturing process. In some embodiments, the method includes heating, using one or more heating devices of the semiconductor manufacturing apparatus, a gas tank and a gas line of the semiconductor manufacturing apparatus. The method further includes filling, through the gas line, the gas tank with a reaction gas. The method further includes changing, using the one or more heating devices, a temperature of the reaction gas in the gas tank. The method further includes supplying the reaction gas from the gas tank to a process chamber of the semiconductor manufacturing apparatus. The changing of the temperature of the reaction gas includes decomposing a portion of the reaction gas into one or more materials different from the reaction gas.
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公开(公告)号：US11738299B2
公开(公告)日：2023-08-29
申请号：US17372855
申请日：2021-07-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Suji Gim , Sunwoo Yook , Youngduk Ko , Youngseok Roh , Seoyoung Maeng , Jongyong Bae , Jihnkoo Lee , Jungjoon Pyeon , Jongha Hwang
CPC classification number: B01D53/0454 , B01D53/0438 , B01D2253/102 , B01D2253/112 , B01D2257/204 , B01D2258/0216 , H01L21/67017
Abstract: An exhaust gas processing system including a process chamber in which an exhaust gas is produced; an exhaust gas measurer receiving the exhaust gas and measuring a concentration of the exhaust gas; a solid producing gas processor receiving the exhaust gas and removing a solid producing gas contained in the exhaust gas; a gas supply supplying dilution and cooling gases to the solid producing gas processor; a processed gas measurer receiving, as a processed gas, the exhaust gas free of the solid producing gas and measuring a temperature of the processed gas and ingredients of the processed gas; and a controller receiving results of measurement of the concentration of the exhaust gas from the exhaust gas measurer and results of measurement of the temperature of the processed gas and the ingredients of the processed gas from the exhaust gas measurer and controlling the gas supply based on the measurement results.
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6.发明授权公开(公告)号：US11549178B2
公开(公告)日：2023-01-10
申请号：US17510532
申请日：2021-10-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Suji Gim , Sunwoo Yook , Youngduk Ko , Youngseok Roh , Seoyoung Maeng , Jongyong Bae , Jihnkoo Lee , Jungjoon Pyeon , Jongha Hwang
IPC: C23C16/455 , B01J35/00 , B01J35/04 , B01D53/94 , B01J37/08
Abstract: An apparatus and method for treating a semiconductor process gas comprises a gas inlet allowing a treatment target gas (or gas to be treated) to flow therethrough; a catalytic reaction portion including a catalyst and configured to allow the treatment target gas to be brought into contact with the catalyst; a space velocity controller between the gas inlet and the catalytic reaction portion, the space velocity controller extending from the gas inlet in a diagonal direction in relation to the gas inlet; a differential pressure buffer portion between the space velocity controller and the catalytic reaction portion and including a filter; and a gas outlet configured to externally discharge a product formed as the treatment target gas comes into contact with the catalyst.
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公开(公告)号：US20220143543A1
公开(公告)日：2022-05-12
申请号：US17380109
申请日：2021-07-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seoyoung Maeng , Iljun Jeon , Suji Gim , Youngseok Roh , Jongyong Bae , Jungjoon Pyeon
Abstract: An apparatus for collecting a by-product, includes: a chamber provided with a gas inlet and a gas outlet and having an internal space; a heater disposed on the gas inlet side of the internal space within the chamber and varying a heating temperature in time series; a vortex forming member disposed around the heater; a plurality of first collecting members disposed below the heater; a second collecting member disposed below the first collecting member so that a plurality of second collecting members intersect each other; and a third collecting member disposed on the gas outlet side of the internal space within the chamber.
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