公开(公告)号：US11931683B2

公开(公告)日：2024-03-19

申请号：US17502463

申请日：2021-10-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Seok Roh ,  Suji Gim ,  Heesub Kim ,  Hee Ock Park ,  Jongyong Bae ,  Sung Chul Yoon ,  Sunsoo Lee ,  Dong Keun Jeon ,  Jinkyoung Joo

IPC: B01D47/06 ,  H01J37/32 ,  B08B9/08

CPC classification number: B01D47/06 ,  H01J37/32844 ,  B08B9/0813

Abstract: A scrubber system may include a scrubber housing including a vertically extended cleaning space, an inflow chamber coupled to a bottom portion of the scrubber housing, and first and second inflow portions, each of which is configured to supply a gas into the inflow chamber. The inflow chamber may include a mixing space, and the mixing space may be connected to the cleaning space. The first inflow portion may include a first connection pipe coupled to the inflow chamber to provide a first connection path and the second inflow portion may include a second connection pipe coupled to the inflow chamber to provide a second connection path. The first and second connection paths may be extended toward the mixing space in opposite directions, respectively, and may be connected to opposite portions of the mixing space, respectively.

公开(公告)号：US20240178274A1

公开(公告)日：2024-05-30

申请号：US18366922

申请日：2023-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gunho Jo ,  Heesub Kim ,  Seung Hyun Lim ,  Bomi Kim ,  Eunho Cho

IPC: H01L29/06 ,  H01L27/092 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L29/0673 ,  H01L27/092 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/775

Abstract: An integrated circuit device includes a first fin-type active region and a second fin-type active region, a device isolation film adjacent to each of the first and second fin-type active regions, a first gate line on the first fin-type active region, a second gate line on the second fin-type active region, and a gate cut insulating pattern separating the first and second gate lines, wherein the device isolation film includes a first local isolation portion and a second local isolation portion, which are separating the first fin-type active region from the second fin-type active region to be apart from each other with the gate cut insulating pattern therebetween.

公开(公告)号：US20240274677A1

公开(公告)日：2024-08-15

申请号：US18370249

申请日：2023-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gunho Jo ,  Chulsung Kim ,  Bomi Kim ,  Heesub Kim ,  Eunho Cho

IPC: H01L29/417 ,  H01L23/48 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L23/481 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: An integrated circuit device includes fin-type active regions protruding from a substrate and extending lengthwise in a first horizontal direction, source/drain regions respectively arranged on the fin-type active regions, a device isolation film covering both sidewalls of each fin-type active region, an insulating structure covering the source/drain regions and the device isolation film, source/drain contacts respectively arranged on and connected to the source/drain regions and apart from each other in a second horizontal direction perpendicular to the first horizontal direction, and a contact isolation insulating film arranged between the source/drain contacts in the second horizontal direction and having a lower surface closer to the substrate than a lower surface of each source/drain contact. At least one of the source/drain contacts includes a first portion extending in a vertical direction toward the substrate along a surface of the contact isolation insulating film.

公开(公告)号：US20240170483A1

公开(公告)日：2024-05-23

申请号：US18347919

申请日：2023-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gunho Jo ,  Heesub Kim ,  Seung Hyun Lim ,  Bomi Kim ,  Eunho Cho

IPC: H01L27/088 ,  H01L21/8234 ,  H01L23/528

CPC classification number: H01L27/088 ,  H01L21/823475 ,  H01L23/5286

Abstract: An integrated circuit device includes a fin-type active region including a first fin portion and a second fin portion apart from each other in a first lateral direction with a contact space therebetween, a first source/drain region on the fin-type active region at a position overlapping the contact space in a vertical direction, a gate line on the first fin portion, a device isolation film covering both sidewalls of each of the first and second fin portions and defining a width of the contact space, a back side source/drain contact electrically connected to the first source/drain region, filling the contact space, and having a sidewall facing each of the first and second fin portions and the device isolation film, and an etch stop layer contacting a top surface of each of the first and second fin portions between the first fin portion and the gate line.