公开(公告)号：US09806113B2

公开(公告)日：2017-10-31

申请号：US15477148

申请日：2017-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sun Oh ,  Kyung-Ho Lee ,  Jung-Chak Ahn ,  Hee-Geun Jeong

IPC: H01L27/14 ,  H01L27/146 ,  H01L31/02

CPC classification number: H01L27/14614 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/02016

Abstract: Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.

公开(公告)号：US09647016B2

公开(公告)日：2017-05-09

申请号：US14340719

申请日：2014-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sun Oh ,  Kyung-Ho Lee ,  Jung-Chak Ahn ,  Hee-Geun Jeong

IPC: H01L27/14 ,  H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/02016

Abstract: Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.

公开(公告)号：US09543349B2

公开(公告)日：2017-01-10

申请号：US14478374

申请日：2014-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sun Oh ,  Kyung-Ho Lee ,  Hee-Geun Jeong

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14689

Abstract: Complementary metal-oxide-semiconductor (CMOS) image sensors are provided. A CMOS image sensor includes a substrate including a pixel array and a peripheral circuit region, a photodiode and a floating diffusion region in the pixel array of the substrate, a transfer gate insulating layer and a transfer gate electrode on the substrate between the photodiode and the floating diffusion region, and a peripheral gate insulating layer and a peripheral gate electrode on the peripheral circuit region. The transfer gate electrode includes a first edge that is rounded to have a first radius of curvature, and the peripheral gate electrode includes a second edge that is rounded to have a second radius of curvature smaller than the first radius of curvature.

Abstract translation: 提供了互补金属氧化物半导体（CMOS）图像传感器。 CMOS图像传感器包括在基板的像素阵列中的像素阵列和外围电路区域，光电二极管和浮动扩散区域的基板，基板上的传输栅极绝缘层和传输栅极电极之间的光电二极管和 浮动扩散区域，外围栅极绝缘层和周边栅极电极。 传输栅极包括圆形以具有第一曲率半径的第一边缘，并且外围栅电极包括圆形的第二边缘以具有小于第一曲率半径的第二曲率半径。

公开(公告)号：US20150243693A1

公开(公告)日：2015-08-27

申请号：US14340719

申请日：2014-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sun Oh ,  Kyung-Ho Lee ,  Jung-Chak Ahn ,  Hee-Geun Jeong

IPC: H01L27/146 ,  H01L29/778

CPC classification number: H01L27/14614 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/02016

Abstract: Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.

Abstract translation: 提供了互补金属氧化物半导体（CMOS）图像传感器。 CMOS图像传感器可以包括具有限定和分割第一有源区和第二有源区的第一器件隔离层的衬底，设置在衬底中的光电二极管，并且可以被配置为与第一器件隔离层垂直重叠，传输栅电极 可以设置在第一有源区中并且可以被配置为垂直地重叠光电二极管，并且浮动扩散区可以在第一有源区中。 传输栅电极可以埋在衬底中。

公开(公告)号：US09385157B2

公开(公告)日：2016-07-05

申请号：US14633381

申请日：2015-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Woo Jung ,  Jung-Chak Ahn ,  Hee-Geun Jeong

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14689

Abstract: A pixel of an image sensor includes a photoelectric conversion region formed in a semiconductor substrate, a floating diffusion region formed in the semiconductor substrate, the floating diffusion region being spaced apart from the photoelectric conversion region, a vertical transfer gate extending from a first surface of the semiconductor substrate into a recess in the semiconductor substrate, and configured to form a transfer channel between the photoelectric conversion region and the floating diffusion region, and an impurity region surrounding the recess. The impurity region has a first impurity concentration at a region adjacent to a side of the recess, and a second impurity concentration higher than the first impurity concentration at a region adjacent to the bottom of the recess.

Abstract translation: 图像传感器的像素包括形成在半导体衬底中的光电转换区域，形成在半导体衬底中的浮动扩散区域，浮动扩散区域与光电转换区域间隔开，垂直传输栅极从第一表面延伸 所述半导体基板成为所述半导体基板的凹部，并且被配置为在所述光电转换区域和所述浮动扩散区域之间形成传输沟道，以及围绕所述凹部的杂质区域。 所述杂质区在与所述凹部的一侧相邻的区域具有第一杂质浓度，并且在与所述凹部的底部相邻的区域处具有高于所述第一杂质浓度的第二杂质浓度。

公开(公告)号：US20150243701A1

公开(公告)日：2015-08-27

申请号：US14478374

申请日：2014-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sun Oh ,  Kyung-Ho Lee ,  Hee-Geun Jeong

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14689

Abstract: Complementary metal-oxide-semiconductor (CMOS) image sensors are provided. A CMOS image sensor includes a substrate including a pixel array and a peripheral circuit region, a photodiode and a floating diffusion region in the pixel array of the substrate, a transfer gate insulating layer and a transfer gate electrode on the substrate between the photodiode and the floating diffusion region, and a peripheral gate insulating layer and a peripheral gate electrode on the peripheral circuit region. The transfer gate electrode includes a first edge that is rounded to have a first radius of curvature, and the peripheral gate electrode includes a second edge that is rounded to have a second radius of curvature smaller than the first radius of curvature.

Abstract translation: 提供了互补金属氧化物半导体（CMOS）图像传感器。 CMOS图像传感器包括在基板的像素阵列中的像素阵列和外围电路区域，光电二极管和浮动扩散区域的基板，基板上的传输栅极绝缘层和传输栅极电极之间的光电二极管和 浮动扩散区域，外围栅极绝缘层和周边栅极电极。 传输栅极包括圆形以具有第一曲率半径的第一边缘，并且外围栅电极包括圆形的第二边缘以具有小于第一曲率半径的第二曲率半径。

公开(公告)号：US20150108555A1

公开(公告)日：2015-04-23

申请号：US14294413

申请日：2014-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Woo Jung ,  Jung-Chak Ahn ,  Hee-Geun Jeong

IPC: H01L27/146 ,  H01L29/66 ,  H01L21/265 ,  H01L31/18

CPC classification number: H01L21/26586 ,  H01L27/14614 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14689 ,  H01L29/66666 ,  H01L29/78 ,  H01L29/7827

Abstract: In a method of manufacturing an image sensor, a photodiode is formed in a substrate. The substrate is etched to form an opening vertically aligned with the photodiode. A gate insulation layer and a first preliminary polysilicon layer are formed on an inner surface of opening and a front surface of substrate. A first doping process is performed on first preliminary polysilicon layer to form first polysilicon layer, and the first polysilicon layer in the opening is uniformly doped with first conductivity type impurities. A second preliminary polysilicon layer is formed on first polysilicon layer. A second doping process is performed on second preliminary polysilicon layer to form second polysilicon layer doped with first conductivity type impurities. The first and second polysilicon layers are patterned to form a buried gate electrode in the opening. The first impurity region is formed at an upper portion of substrate adjacent to buried gate electrode.

Abstract translation: 在制造图像传感器的方法中，在基板中形成光电二极管。 蚀刻衬底以形成与光电二极管垂直对准的开口。 在开口的内表面和基板的前表面上形成栅极绝缘层和第一初步多晶硅层。 在第一初步多晶硅层上进行第一掺杂工艺以形成第一多晶硅层，并且开口中的第一多晶硅层均匀地掺杂有第一导电类型的杂质。 在第一多晶硅层上形成第二初步多晶硅层。 在第二初步多晶硅层上执行第二掺杂工艺以形成掺杂有第一导电类型杂质的第二多晶硅层。 图案化第一和第二多晶硅层，以在开口中形成掩埋栅电极。 第一杂质区形成在与掩埋栅电极相邻的衬底的上部。