公开(公告)号：US12255206B2

公开(公告)日：2025-03-18

申请号：US17699724

申请日：2022-03-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungil Park ,  Jae Hyun Park ,  Doyoung Choi ,  Youngmoon Choi ,  Daewon Ha

IPC: H01L27/092 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

Abstract: A semiconductor device includes: an active pattern extending in a first direction on a substrate; a first lower source/drain pattern and a second lower source/drain pattern provided on the active pattern and spaced apart from each other in the first direction; a first upper source/drain pattern provided on the first lower source/drain pattern; a second upper source/drain pattern provided on the second lower source/drain pattern; and a gate electrode crossing the active pattern and extending in a second direction intersecting the first direction. The gate electrode includes an overlapping portion overlapping the active pattern in a third direction perpendicular to the first direction and the second direction. A length of the overlapping portion in the second direction is less than a length of the first lower source/drain pattern in the second direction.

公开(公告)号：US20230046546A1

公开(公告)日：2023-02-16

申请号：US17699724

申请日：2022-03-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungil Park ,  Jae Hyun Park ,  Doyoung Choi ,  Youngmoon Choi ,  Daewon Ha

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66

Abstract: A semiconductor device includes: an active pattern extending in a first direction on a substrate; a first lower source/drain pattern and a second lower source/drain pattern provided on the active pattern and spaced apart from each other in the first direction; a first upper source/drain pattern provided on the first lower source/drain pattern; a second upper source/drain pattern provided on the second lower source/drain pattern; and a gate electrode crossing the active pattern and extending in a second direction intersecting the first direction. The gate electrode includes an overlapping portion overlapping the active pattern in a third direction perpendicular to the first direction and the second direction. A length of the overlapping portion in the second direction is less than a length of the first lower source/drain pattern in the second direction.

公开(公告)号：US09793381B2

公开(公告)日：2017-10-17

申请号：US15131611

申请日：2016-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungin Choi ,  Dongwoo Kim ,  Chang Woo Sohn ,  Youngmoon Choi

IPC: H01L29/66 ,  H01L29/161 ,  H01L29/165 ,  H01L29/78 ,  H01L21/3065

CPC classification number: H01L29/66795 ,  H01L21/3065 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848

Abstract: A method for manufacturing a semiconductor device includes forming a fin structure extending in a first direction on a substrate, forming a sacrificial gate pattern extending in a second direction to intersect the fin structure, forming a gate spacer layer covering the fin structure and the sacrificial gate pattern, providing a first ion beam having a first incident angle range and a second ion beam having a second incident angle range to the substrate, patterning the gate spacer layer using the first ion beam and the second ion beam to form gate spacers on sidewalls of the sacrificial gate pattern, forming source/drain regions at both sides of the sacrificial gate patterns, and replacing the sacrificial gate pattern with a gate electrode.

公开(公告)号：US09466724B2

公开(公告)日：2016-10-11

申请号：US14704485

申请日：2015-05-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changjae Yang ,  Shigenobu Maeda ,  Changhwa Kim ,  Youngmoon Choi

IPC: H01L27/12 ,  H01L29/78 ,  H01L29/04

CPC classification number: H01L29/7853 ,  H01L29/045 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: According to an exemplary embodiment of the present embodiment, a semiconductor device is provided as follows. An active fin protrudes from a substrate, extending in a direction. A gate structure crosses a first region of the active fin. A source/drain is disposed on a second region of the active fin. The source/drain includes upper surfaces and vertical side surfaces. The vertical side surfaces are in substantially parallel with side surfaces of the active fin.

Abstract translation: 根据本实施例的示例性实施例，提供如下的半导体器件。 主动翅片从沿着方向延伸的基底突出。 栅极结构与有源鳍片的第一区域交叉。 源极/漏极设置在有源鳍片的第二区域上。 源极/漏极包括上表面和垂直侧面。 垂直侧表面基本上平行于活动翅片的侧表面。