公开(公告)号：US12094924B2

公开(公告)日：2024-09-17

申请号：US17567316

申请日：2022-01-03

申请人： Samsung Electronics Co., Ltd.

发明人： Kyoo Ho Jung ,  Sang Yeol Kang ,  Su Hwan Kim ,  Dong Kwan Baek ,  Yu Kyung Shin ,  Won Sik Choi

IPC分类号： G11C11/402 ,  H01L49/02 ,  H10B12/00

CPC分类号： H01L28/65 ,  G11C11/4023 ,  H10B12/30

摘要： A capacitor structure, a semiconductor memory device including the same, a method for fabricating the same, and a method for fabricating a semiconductor device including the same are provided. The capacitor structure includes a lower electrode, an upper electrode, and a capacitor dielectric film which is interposed between the lower electrode and the upper electrode, wherein the lower electrode includes an electrode film including a first metal element, and a doping oxide film including an oxide of the first metal element between the electrode film and the capacitor dielectric film, and the doping oxide film further includes a second metal element including at least one of Group 5 to Group 11 and Group 15 metal elements, and an impurity element including at least one of silicon (Si), aluminum (Al), zirconium (Zr) and hafnium (Hf).