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公开(公告)号：US09443735B2
公开(公告)日：2016-09-13
申请号：US14444037
申请日：2014-07-28
发明人： Jin Soak Kim , Gab Jin Nam , Dong Hwan Kim , Su Hwan Kim , Toshiro Nakanishi , Sung Kweon Baek , Tae Hyun An , Eun Ae Chung
IPC分类号： H01L21/336 , H01L21/762 , H01L21/28 , H01L29/51 , H01L29/66 , H01L29/78 , H01L29/49
CPC分类号： H01L21/28185 , H01L29/495 , H01L29/4966 , H01L29/518 , H01L29/66545 , H01L29/6659 , H01L29/66795 , H01L29/7833
摘要： There is provided a method of manufacturing a semiconductor device including: preparing a semiconductor substrate having an active region; forming a dielectric layer for gate insulation on the active region; forming a curing layer with a material containing germanium (Ge) on the dielectric layer; heat-treating the curing layer; and removing the curing layer. The germanium-containing material may be silicon germanium (SiGe) or germanium (Ge).
摘要翻译： 提供一种制造半导体器件的方法，包括：制备具有有源区的半导体衬底; 在所述有源区上形成用于栅极绝缘的介电层; 在介电层上形成含有锗（Ge）的材料的固化层; 热处理固化层; 并去除固化层。 含锗材料可以是硅锗（SiGe）或锗（Ge）。
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2.发明公开公开(公告)号：US20230212749A1
公开(公告)日：2023-07-06
申请号：US18060861
申请日：2022-12-01
发明人： Jung Min PARK , Su Hwan Kim , Han Jin LIM
IPC分类号： C23C16/455 , C23C16/52
CPC分类号： C23C16/45578 , C23C16/52 , C23C16/45544
摘要： A device for manufacturing a semiconductor device is provided. The device for manufacturing a semiconductor device includes a tube extending in a first direction, and defining a reaction space therein and configured to accommodate a boat that is configured to receive a plurality of substrates therein, and first and second nozzles each extending in the first direction inside the tube, and being apart from each other on a plane that is perpendicular to the first direction and parallel to upper surfaces of the substrates, wherein the first and second nozzles include a plurality of first injection ports and a plurality of first second injection ports that are configured inject different gases toward a center of the reaction space, respectively, and a plurality of second injection ports are placed in a region between a corresponding pair of adjacent ones of the plurality of first injection ports along the first direction.
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公开(公告)号：US20150132937A1
公开(公告)日：2015-05-14
申请号：US14444037
申请日：2014-07-28
发明人： Jin Soak Kim , Gab Jin Nam , Dong Hwan Kim , Su Hwan Kim , Toshiro Nakanishi , Sung Kweon Baek , Tae Hyun An , Eun Ae Chung
IPC分类号： H01L21/28
CPC分类号： H01L21/28185 , H01L29/495 , H01L29/4966 , H01L29/518 , H01L29/66545 , H01L29/6659 , H01L29/66795 , H01L29/7833
摘要： There is provided a method of manufacturing a semiconductor device including: preparing a semiconductor substrate having an active region; forming a dielectric layer for gate insulation on the active region; forming a curing layer with a material containing germanium (Ge) on the dielectric layer; heat-treating the curing layer; and removing the curing layer. The germanium-containing material may be silicon germanium (SiGe) or germanium (Ge).
摘要翻译： 提供一种制造半导体器件的方法，包括：制备具有有源区的半导体衬底; 在所述有源区上形成用于栅极绝缘的介电层; 在介电层上形成含有锗（Ge）的材料的固化层; 热处理固化层; 并去除固化层。 含锗材料可以是硅锗（SiGe）或锗（Ge）。
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公开(公告)号：US11899947B2
公开(公告)日：2024-02-13
申请号：US17842181
申请日：2022-06-16
发明人： Sang Won Jung , Min Ji Kim , Hye Jeong Jang , Su Hwan Kim , Min Sik Son , Dong Hwan Jeong , Young Rae Jo
IPC分类号： G06F3/06
CPC分类号： G06F3/0631 , G06F3/0604 , G06F3/064 , G06F3/0656 , G06F3/0659 , G06F3/0679
摘要： A storage device includes a nonvolatile memory device including a plurality of nonvolatile memories; a controller configured to allocate write blocks of the nonvolatile memory device to a plurality of streams provided from an outside; and a buffer memory configured to store a result of allocation of the write blocks to the plurality of streams, wherein the controller is further configured to reallocate the write blocks of the nonvolatile memory device to the plurality of streams based on the result of allocation stored in the buffer memory.
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公开(公告)号：US11385812B2
公开(公告)日：2022-07-12
申请号：US16987563
申请日：2020-08-07
发明人： Sang Won Jung , Min Ji Kim , Hye Jeong Jang , Su Hwan Kim , Min Sik Son , Dong Hwan Jeong , Young Rae Jo
IPC分类号： G06F3/06
摘要： A storage device includes a nonvolatile memory device including a plurality of nonvolatile memories; a controller configured to allocate write blocks of the nonvolatile memory device to a plurality of streams provided from an outside; and a buffer memory configured to store a result of allocation of the write blocks to the plurality of streams, wherein the controller is further configured to reallocate the write blocks of the nonvolatile memory device to the plurality of streams based on the result of allocation stored in the buffer memory.
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公开(公告)号：US12094924B2
公开(公告)日：2024-09-17
申请号：US17567316
申请日：2022-01-03
发明人： Kyoo Ho Jung , Sang Yeol Kang , Su Hwan Kim , Dong Kwan Baek , Yu Kyung Shin , Won Sik Choi
IPC分类号： G11C11/402 , H01L49/02 , H10B12/00
CPC分类号： H01L28/65 , G11C11/4023 , H10B12/30
摘要： A capacitor structure, a semiconductor memory device including the same, a method for fabricating the same, and a method for fabricating a semiconductor device including the same are provided. The capacitor structure includes a lower electrode, an upper electrode, and a capacitor dielectric film which is interposed between the lower electrode and the upper electrode, wherein the lower electrode includes an electrode film including a first metal element, and a doping oxide film including an oxide of the first metal element between the electrode film and the capacitor dielectric film, and the doping oxide film further includes a second metal element including at least one of Group 5 to Group 11 and Group 15 metal elements, and an impurity element including at least one of silicon (Si), aluminum (Al), zirconium (Zr) and hafnium (Hf).
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7.发明授权公开(公告)号：US09215117B2
公开(公告)日：2015-12-15
申请号：US14599729
申请日：2015-01-19
发明人： Sang Hyo Lee , Su Hwan Kim , Ji Sung Kim
CPC分类号： H04L27/06
摘要： An amplitude shift keying (ASK) demodulator and a communication apparatus including the same are provided. The ASK demodulator includes an envelope detector, a clock generator, a plurality of elementary demodulators, and a post signal processor. The envelope detector is configured to detect an envelope of an ASK modulated signal and to generate an envelope signal. The clock generator is configured to generate a main clock signal and first through n-th clock signals, where n is a positive integer of at least 2. The plurality of elementary demodulators are each configured to sample the envelope signal using a first sampling clock signal and a second sampling clock signal, and to output first through n-th elementary demodulated signals based on a difference between the sampled envelope signals using the first sampling clock signal and the second sampling clock signal. The post signal processor is configured to generate a final demodulated signal using at least one of the first through n-th elementary demodulated signals.
摘要翻译： 提供了一种幅度键控（ASK）解调器和包括该解调器的通信装置。 ASK解调器包括包络检测器，时钟发生器，多个基本解调器和后置信号处理器。 包络检测器被配置为检测ASK调制信号的包络并产生包络信号。 时钟发生器被配置为产生主时钟信号和第一至第n时钟信号，其中n是至少为2的正整数。多个基本解调器被配置为使用第一采样时钟信号对包络信号进行采样 以及第二采样时钟信号，并且基于使用第一采样时钟信号和第二采样时钟信号的采样包络信号之间的差来输出第一到第n个基本解调信号。 后信号处理器被配置为使用第一到第n个基本解调信号中的至少一个来产生最终解调信号。
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