公开(公告)号：US11728429B2

公开(公告)日：2023-08-15

申请号：US17549985

申请日：2021-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yul Lee ,  Yuri Masuoka

IPC: H01L21/28 ,  H01L29/78 ,  H01L29/66 ,  H01L21/762 ,  H01L29/08

CPC classification number: H01L29/7848 ,  H01L21/28167 ,  H01L21/76264 ,  H01L29/0895 ,  H01L29/66621 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66651 ,  H01L29/785 ,  H01L29/7833

Abstract: A semiconductor device includes at least one active pattern on a substrate, at least one gate electrode intersecting the at least one active pattern, source/drain regions on the at least one active pattern, the source/drain regions being on opposite sides of the at least one gate electrode, and a barrier layer between at least one of the source/drain regions and the at least one active pattern, the barrier layer being at least on bottoms of the source/drain regions and including oxygen.

公开(公告)号：US11222978B2

公开(公告)日：2022-01-11

申请号：US16019811

申请日：2018-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yul Lee ,  Yuri Masuoka

IPC: H01L31/072 ,  H01L29/78 ,  H01L29/66 ,  H01L21/28 ,  H01L21/762 ,  H01L29/08

Abstract: A semiconductor device includes at least one active pattern on a substrate, at least one gate electrode intersecting the at least one active pattern, source/drain regions on the at least one active pattern, the source/drain regions being on opposite sides of the at least one gate electrode, and a barrier layer between at least one of the source/drain regions and the at least one active pattern, the barrier layer being at least on bottoms of the source/drain regions and including oxygen.