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    Image sensor and manufacturing method thereof
    1.
    发明授权
    Image sensor and manufacturing method thereof 有权

    公开(公告)号：US10249667B2

    公开(公告)日：2019-04-02

    申请号：US15926371

    申请日：2018-03-20

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yun-Ki Lee ,  Hye-Jung Kim ,  Hong-Ki Kim ,  Kyung-Duck Lee

    IPC: H01L27/146 ,  H04N5/369 ,  H04N5/335 ,  H04N5/232

    Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.

    Image sensor having shielding structure
    2.
    发明授权
    Image sensor having shielding structure 有权

    公开(公告)号：US09853075B2

    公开(公告)日：2017-12-26

    申请号：US15285018

    申请日：2016-10-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yun-Ki Lee ,  Chang-Rok Moon ,  Min-Wook Jung

    IPC: H01L27/146

    CPC classification number: H01L27/14623 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687

    Abstract: An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.

    Image sensor having shielding structure
    3.
    发明授权
    Image sensor having shielding structure 有权
    具有屏蔽结构的图像传感器

    公开(公告)号：US09461084B2

    公开(公告)日：2016-10-04

    申请号：US14626549

    申请日：2015-02-19

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yun-Ki Lee ,  Chang-Rok Moon ,  Min-Wook Jung

    IPC: H01L27/146

    CPC classification number: H01L27/14623 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687

    Abstract: An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.

    Abstract translation: 提供图像传感器。 图像传感器包括基板，第一层间绝缘层，第一金属线和屏蔽结构。 衬底包括像素阵列，外围电路区域和布置在像素阵列和外围电路区域之间的接口区域。 第一层间绝缘层形成在基板的第一表面上。 第一金属线设置在像素阵列的第一层间绝缘层上。 第二层间绝缘层设置在第一层间绝缘层上，其中第二层间绝缘层覆盖第一金属线。 屏蔽结构通过衬底在屏蔽结构中电绝缘衬底的像素阵列和外围电路区域的界面区域中。

    Method of manufacturing CMOS image sensor
    5.
    发明授权
    Method of manufacturing CMOS image sensor 有权
    CMOS图像传感器的制造方法

    公开(公告)号：US09059066B2

    公开(公告)日：2015-06-16

    申请号：US14228914

    申请日：2014-03-28

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yun-Ki Lee

    IPC: H01L31/113 ,  H01L27/146

    CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643

    Abstract: A CIS and a method of manufacturing the same, the CIS including a substrate having a first surface and second surface opposite thereto, the substrate including an APS array region including a photoelectric transformation element and a peripheral circuit region; an insulating interlayer on the first surface of the substrate and including metal wirings electrically connected to the photoelectric transformation element; a light blocking layer on the peripheral circuit region of the second surface of the substrate, exposing the APS array region, and including a plurality of metal wiring patterns spaced apart from one another to form at least one drainage path along a boundary region between the APS array region and the peripheral circuit region; a color filter layer on the second surface of the substrate covering the APS array region and the light blocking layer; and a microlens on the color filter layer on the APS array region.

    Abstract translation: 一种CIS及其制造方法，所述CIS包括具有与其相反的第一表面和第二表面的基板，所述基板包括包括光电转换元件和外围电路区域的APS阵列区域; 在所述基板的第一表面上的绝缘中间层，并且包括电连接到所述光电转换元件的金属布线; 在所述基板的第二表面的外围电路区域上的遮光层，暴露所述APS阵列区域，并且包括彼此间隔开的多个金属布线图案，以形成沿着所述APS之间的边界区域的至少一个排水路径 阵列区域和外围电路区域; 在所述基板的覆盖所述APS阵列区域和所述遮光层的所述第二表面上的滤色器层; 以及APS阵列区域上的滤色器层上的微透镜。

    Image sensor and manufacturing method thereof
    6.
    发明授权
    Image sensor and manufacturing method thereof 有权

    公开(公告)号：US11488996B2

    公开(公告)日：2022-11-01

    申请号：US16824265

    申请日：2020-03-19

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yun-Ki Lee ,  Hye-Jung Kim ,  Hong-Ki Kim ,  Kyung-Duck Lee

    IPC: H04N5/369 ,  H01L27/146 ,  H04N5/335 ,  H04N5/232

    Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.

    Image sensor having shielding structure
    7.
    再颁专利
    Image sensor having shielding structure 有权

    公开(公告)号：USRE48755E1

    公开(公告)日：2021-09-28

    申请号：US16268220

    申请日：2019-02-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yun-Ki Lee ,  Chang-Rok Moon ,  Min-Wook Jung

    IPC: H01L27/146

    Abstract: An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.

    Image sensor and manufacturing method thereof
    8.
    发明授权
    Image sensor and manufacturing method thereof 有权

    公开(公告)号：US10608033B2

    公开(公告)日：2020-03-31

    申请号：US16284703

    申请日：2019-02-25

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yun-Ki Lee ,  Hye-Jung Kim ,  Hong-Ki Kim ,  Kyung-Duck Lee

    IPC: H04N5/369 ,  H01L27/146 ,  H04N5/335 ,  H04N5/232

    Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.

    IMAGE SENSOR HAVING SHIELDING STRUCTURE
    10.
    发明申请
    IMAGE SENSOR HAVING SHIELDING STRUCTURE 有权
    具有屏蔽结构的图像传感器

    公开(公告)号：US20160056188A1

    公开(公告)日：2016-02-25

    申请号：US14626549

    申请日：2015-02-19

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yun-Ki Lee ,  Chang-Rok Moon ,  Min-Wook Jung

    IPC: H01L27/146

    CPC classification number: H01L27/14623 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687

    Abstract: An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.

    Abstract translation: 提供图像传感器。 图像传感器包括基板，第一层间绝缘层，第一金属线和屏蔽结构。 衬底包括像素阵列，外围电路区域和布置在像素阵列和外围电路区域之间的接口区域。 第一层间绝缘层形成在基板的第一表面上。 第一金属线设置在像素阵列的第一层间绝缘层上。 第二层间绝缘层设置在第一层间绝缘层上，其中第二层间绝缘层覆盖第一金属线。 屏蔽结构通过衬底在屏蔽结构中电绝缘衬底的像素阵列和外围电路区域的界面区域中。

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