公开(公告)号：US20140146210A1

公开(公告)日：2014-05-29

申请号：US14067293

申请日：2013-10-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeokjong Lee ,  Byung-Jo Kim ,  Jaejung Park ,  Yunjung Kim ,  Jinho Seo ,  Seung Hyun Lim ,  Seogheon Ham

IPC: H04N5/361

CPC classification number: H04N5/361 ,  H04N5/378

Abstract: A solid state imaging device includes a pixel array comprising a plurality of photoelectric conversion devices and an analog to digital conversion (ADC) circuit configured to convert an image signal received from the pixel array to a digital signal responsive to a ramp signal and a gain setting. The solid state imaging device further includes a ramp signal generator circuit configured to generate the ramp signal with a slope that varies responsive to a control signal and a dark level offset compensation circuit configured to generate the control signal responsive to the gain setting and a dark level measurement.

Abstract translation: 固态成像装置包括像素阵列，其包括多个光电转换装置和模数转换（ADC）电路，模拟数字转换（ADC）电路被配置为响应于斜坡信号和增益设置将从像素阵列接收的图像信号转换为数字信号 。 固态成像装置还包括斜坡信号发生器电路，该斜坡信号发生器电路被配置为产生具有响应于控制信号变化的斜率的斜坡信号和配置成响应于增益设置产生控制信号的暗电平偏移补偿电路和暗电平 测量。