公开(公告)号：US20180355213A1

公开(公告)日：2018-12-13

申请号：US15883655

申请日：2018-01-30

Applicant: Samsung Electronics Co., Ltd. ,  KCTECH CO., LTD.

Inventor： Seung Ho Park ,  Hyun Goo KONG ,  Jung Hun KIM ,  Sang Mi LEE ,  Woo In LEE ,  Hee Sook CHEON ,  Sang Kyun KIM ,  Hao CUI ,  Jong Hyuk PARK ,  Il Young YOON

IPC: C09G1/02 ,  H01L21/28 ,  H01L27/108 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/28079 ,  H01L21/28123 ,  H01L21/3212 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10876

Abstract: A slurry composition for polishing a metal layer and a method for fabricating a semiconductor device using the same are provided. The slurry composition for polishing a metal layer includes polishing particles including a metal oxide, an oxidizer including hydrogen peroxide, and a first polishing regulator including at least one selected from a group consisting of phosphate, phosphite, hypophosphite, and metaphosphate, wherein a content of the oxidizer is 0.01 wt % to 0.09 wt % with respect to 100 wt % of the slurry composition for polishing the metal layer.

公开(公告)号：US20200255689A1

公开(公告)日：2020-08-13

申请号：US16661287

申请日：2019-10-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-il PARK ,  Myeong Hoon HAN ,  Sanghyun PARK ,  Wonki HUR ,  Seungho PARK ,  Hao CUI

IPC: C09G1/02 ,  H01L27/24 ,  H01L45/00

Abstract: A polishing composition and a method of fabricating a semiconductor device using the same, the polishing composition including an abrasive; a first additive that includes a C5 to C30 hydrocarbon including an amide group and a carboxyl group or a C5 to C30 hydrocarbon including two or more amine groups; and a second additive that includes a sulfonic acid, a sulfonate, or a sulfonate salt.

公开(公告)号：US20200235165A1

公开(公告)日：2020-07-23

申请号：US16586140

申请日：2019-09-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hao CUI ,  Se Yun PARK ,  Jong Hyuk PARK ,  Bo Un YOON ,  II Young YOON

IPC: H01L27/24 ,  H01L45/00

Abstract: A semiconductor device that includes a plurality of word lines disposed on a substrate in which p-type and n-type active regions are defined, and extends in a first direction. A plurality of bit lines is disposed on the plurality of word lines and extends in a second direction, perpendicular to the first direction. A plurality of memory cells is disposed between the plurality of word lines and the plurality of bit lines and each includes a data storage pattern. The plurality of memory cells includes a plurality of dummy memory cells and a plurality of main memory cells. An upper surface of the data storage pattern of the main memory cells is higher than an upper surface of the data storage pattern of the dummy memory cells.