公开(公告)号：US11201168B2

公开(公告)日：2021-12-14

申请号：US16735085

申请日：2020-01-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Lee Eun Ku ,  Jae Ho Jeong ,  Woo Sung Yang ,  Jung Hwan Lee ,  In Su Noh ,  Sun Young Lee

IPC: H01L27/1157 ,  H01L27/11565 ,  H01L27/11519 ,  H01L27/11582 ,  H01L27/11524 ,  H01L27/11575 ,  H01L27/11573

Abstract: A semiconductor device includes a structure including gate electrodes and interlayer insulating layers alternately stacked on an upper surface of a substrate, trenches passing through the structure; and a groove passing through a portion of the structure. The gate electrodes include word lines, and first and second select lines. The word lines are stacked in a vertical direction upwardly from the upper surface of the substrate. The first and second select lines are on the word lines, and are spaced apart from each other in a first horizontal direction parallel to the upper surface of the substrate. The trenches include a first trench and a second trench spaced apart from the first trench. The groove is on the word lines. The groove and a portion of the first trench are between the first select line and the second select line. The second trench is spaced apart from the select lines.

公开(公告)号：US20200373306A1

公开(公告)日：2020-11-26

申请号：US16991738

申请日：2020-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JIN A KIM ,  Sun Young Lee ,  Yong Kwan Kim ,  Ji Young Kim ,  Chang Hyun Cho

IPC: H01L27/108 ,  H01L21/66

Abstract: A method of fabricating a semiconductor device. A cell area and a core area is defined in a substrate. A bit line structure disposed in the cell area is provided. A gate structure disposed in the core area is provided, and a core capping film disposed on the gate structure is provided. A height of the core capping film is greater than a height of the bit line structure. A first contact film is formed on the bit line structure. A second contact film is formed on the core capping film. A mask is formed on the first contact film. An upper surface of the core capping film is exposed using the mask. The first contact film is etched until a height of the first contact film becomes less than a height of the bit line structure using an etching process. In the etching process, an etching rate for the first contact film is greater than etching rates for the bit line structure and the core capping film.

公开(公告)号：US10804277B2

公开(公告)日：2020-10-13

申请号：US15718737

申请日：2017-09-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A Kim ,  Sun Young Lee ,  Yong Kwan Kim ,  Ji Young Kim ,  Chang Hyun Cho

IPC: H01L27/108 ,  H01L21/66

Abstract: A method of fabricating a semiconductor device. A cell area and a core area is defined in a substrate. A bit line structure disposed in the cell area is provided. A gate structure disposed in the core area is provided, and a core capping film disposed on the gate structure is provided. A height of the core capping film is greater than a height of the bit line structure. A first contact film is formed on the bit line structure. A second contact film is formed on the core capping film. A mask is formed on the first contact film. An upper surface of the core capping film is exposed using the mask. The first contact film is etched until a height of the first contact film becomes less than a height of the bit line structure using an etching process. In the etching process, an etching rate for the first contact film is greater than etching rates for the bit line structure and the core capping film.

公开(公告)号：US10153170B2

公开(公告)日：2018-12-11

申请号：US15416574

申请日：2017-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwa Jin Jang ,  Jae Young Park ,  Sun Young Lee ,  Ha Kyu Seong ,  Han Mei Choi

IPC: H01L21/3065 ,  H01L21/84 ,  H01L21/263 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66

Abstract: A method of fabricating a semiconductor device is provided. The method includes forming a first fin structure which includes first semiconductor patterns and second semiconductor patterns stacked alternately on a substrate and extends in a first direction, forming an exposed first wire pattern group which includes the second semiconductor patterns by removing the first semiconductor patterns, heat-treating the exposed first wire pattern group, and forming a first gate electrode which surrounds the first wire pattern group and extends in a second direction different from the first direction.

公开(公告)号：US12200230B2

公开(公告)日：2025-01-14

申请号：US18467662

申请日：2023-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun Young Lee

IPC: H04N19/169 ,  H04N19/82

Abstract: The present invention discloses a video decoding method performed by a video decoding device. The video decoding method according to an embodiment may include the steps of: obtaining NAL unit type information indicating a type of a current network abstraction layer (NAL) unit from a bitstream; and decoding, when the NAL unit type information indicates that the NAL unit type of the current NAL unit is an encoded data for an slice, the slice based on whether a mixed NAL unit type is applied to a current picture.

公开(公告)号：US11462547B2

公开(公告)日：2022-10-04

申请号：US16991738

申请日：2020-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A Kim ,  Sun Young Lee ,  Yong Kwan Kim ,  Ji Young Kim ,  Chang Hyun Cho

IPC: H01L27/108 ,  H01L21/66

Abstract: A method of fabricating a semiconductor device. A cell area and a core area is defined in a substrate. A bit line structure disposed in the cell area is provided. A gate structure disposed in the core area is provided, and a core capping film disposed on the gate structure is provided. A height of the core capping film is greater than a height of the bit line structure. A first contact film is formed on the bit line structure. A second contact film is formed on the core capping film. A mask is formed on the first contact film. An upper surface of the core capping film is exposed using the mask. The first contact film is etched until a height of the first contact film becomes less than a height of the bit line structure using an etching process. In the etching process, an etching rate for the first contact film is greater than etching rates for the bit line structure and the core capping film.

公开(公告)号：US10529734B2

公开(公告)日：2020-01-07

申请号：US15869766

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Lee Eun Ku ,  Jae Ho Jeong ,  Woo Sung Yang ,  Jung Hwan Lee ,  In Su Noh ,  Sun Young Lee

IPC: H01L27/1157 ,  H01L27/11565 ,  H01L27/11524 ,  H01L27/11519 ,  H01L27/11582

Abstract: A semiconductor device can include a semiconductor substrate having a memory cell region and a pad region that is adjacent to the memory cell region, the pad region can include a first pad region, a second pad region between the memory cell region and the first pad region, and a buffer region that is between the first and second pad regions. A separation source structure can include a first portion and a second portion that are parallel to each other in a plan view of the semiconductor device. A first source structure and a second source structure can be disposed between the first and second portions of the separation source structure, where the first and second source structures can have end portions that oppose each other, the first source structure being disposed in the first pad region, and the second source structure being disposed in the second pad region. A gate group can be disposed in the memory cell region and the pad region between the first and second portions of the separation source structure, where each of the end portions of the first and second source structures has a planar shape, and a width of each end portion increases and then decreases as each of the end portions extends toward the other.

公开(公告)号：US20180175040A1

公开(公告)日：2018-06-21

申请号：US15722085

申请日：2017-10-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JIN A KIM ,  Sun Young Lee ,  Ji Young Kim ,  Chang Hyun Cho

IPC: H01L27/108 ,  H01L29/423 ,  H01L21/762

CPC classification number: H01L27/10829 ,  H01L21/76224 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/1087 ,  H01L27/10876 ,  H01L29/4236

Abstract: A semiconductor device is provided. The provided semiconductor device may have enhanced reliability and operating characteristics. The semiconductor device includes a substrate, a device isolation film formed within the substrate, a first gate structure formed within the substrate, a recess formed on at least one side of the first gate structure and within the substrate and the device isolation film, the recess comprising an upper portion and a lower portion wherein the lower portion of the recess is formed within the substrate and the upper portion of the recess is formed across the substrate and the device isolation film, a buried contact filling the recess and an information storage electrically connected to the buried contact.

公开(公告)号：US09100751B2

公开(公告)日：2015-08-04

申请号：US13925252

申请日：2013-06-24

Applicant: Samsung Electronics Co. Ltd.

Inventor： Jun Tai Kim ,  Byoung-Hee Lee ,  Jang Hoon Kang ,  Joon Rae Cho ,  Jung Eun Han ,  Ki Won Kim ,  Tae Eon Kim ,  Sun Young Lee

IPC: H04R1/20 ,  H04R1/30 ,  H04R5/02 ,  H04R1/28

CPC classification number: H04R1/30 ,  H04R1/2853 ,  H04R1/2861 ,  H04R5/02 ,  H04R2205/021

Abstract: A docking station for sound amplification and sound quality enhancement is provided. The docking station includes a support structure for holding a mobile terminal having an internal speaker to sustain the posture of the mobile terminal, and a body for supporting the support structure, and for physically contacting the speaker to increase the volume of sound output from the speaker. The body includes a collecting hole for contacting the speaker to collect sound waves, and a guide hole that extends from the collecting hole through the body to the outside along an extension direction, is divided into two branches within the body to guide the collected sound waves along different paths, and has a horn shape whose cross section increases along the extension direction. Hence, the docking station can increase the volume of audible sound and sound quality without separate supply of power.

Abstract translation: 提供用于声音放大和声音质量增强的坞站。 对接站包括用于保持具有内部扬声器的移动终端以支持移动终端的姿势的支撑结构，以及用于支撑支撑结构的主体，并且用于物理地接触扬声器以增加从扬声器输出的声音的音量 。 主体包括用于接触扬声器以收集声波的收集孔，并且沿着延伸方向从收集孔穿过主体延伸到外部的引导孔在主体内被分成两个分支，以引导收集的声波 沿着不同的路径，并且具有横截面沿着延伸方向增加的喇叭形状。 因此，对接站可以增加可听见的声音和音质的音量，而不需要单独的电力供应。

公开(公告)号：US12238288B2

公开(公告)日：2025-02-25

申请号：US18408484

申请日：2024-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun Young Lee

IPC: H04N19/122 ,  H04N19/103 ,  H04N19/136 ,  H04N19/176 ,  H04N19/60 ,  H04N19/70

Abstract: Provided are a video decoding method and device. This specification provides a video decoding method comprising the steps of: acquiring a parameter indicating whether a multiple transform set is applicable to a block to be decoded, as well as information about the width of the block to be decoded and the height of the block to be decoded; determining the transform type of the block to be decoded on the basis of at least one of the parameter indicating whether a multiple transform set is applicable, or the information about the width and height of the block to be decoded, and setting a zero-out region of the block to be decoded; and inverse-transforming the block to be decoded on the basis of the zero-out region of the block to be decoded and the result of determining the transform type.