公开(公告)号：US06294295B1

公开(公告)日：2001-09-25

申请号：US09519612

申请日：2000-03-06

申请人： Chia-Hui Lin ,  San-De Tzu ,  Wei-Zen Chou

发明人： Chia-Hui Lin ,  San-De Tzu ,  Wei-Zen Chou

IPC分类号： G03F900

CPC分类号： G03F1/32 ,  G03F1/26 ,  G03F1/29

摘要： This invention describes an attenuating phase shifting mask, a method of forming the attenuating phase shifting mask, and a method of using the attenuating phase shifting mask to expose a contact hole pattern having both dense and isolated contact holes on a layer of photosensitive dielectric. The mask has a rim of first attenuating phase shifting material, having a first transmittance and providing a phase shift of 180°, surrounding the dense holes and a rim of second attenuating phase shifting material, having a second transmittance and providing a phase shift of 180°, surrounding the isolated holes. The second transmittance is greater than the first transmittance. The dense holes have a duty ratio of less than 2.0 and the isolated holes have a duty ratio of greater than or equal to 2.0. The second attenuating phase shifting material results from treating the first attenuating phase shifting material for a first time with a first solution which increases the transmittance and changes the phase shift. The attenuating phase shifting material is then treated with a second solution for a second time to restore the phase shift to 180° and further increase the transmittance.

摘要翻译： 本发明描述了衰减相移掩模，形成衰减相移掩模的方法，以及使用衰减相移掩模来曝光在光敏电介质层上具有密集和隔离接触孔的接触孔图案的方法。 掩模具有第一衰减相移材料的边缘，具有第一透射率并且提供180°的相移，围绕致密孔和第二衰减相移材料的边缘，具有第二透射率并提供180°的相移 °，围绕隔离孔。 第二透射率大于第一透射率。 密孔的占空比小于2.0，隔离孔的占空比大于或等于2.0。 第二衰减相移材料是通过用提高透射率并改变相移的第一溶液第一次处理第一衰减相移材料产生的。 然后衰减相移材料用第二溶液处理第二次以将相移恢复到180°并进一步增加透射率。

公开(公告)号：US06251547B1

公开(公告)日：2001-06-26

申请号：US09422180

申请日：1999-10-22

申请人： San-De Tzu ,  Chia-Hui Lin ,  Wei-Zen Chou

发明人： San-De Tzu ,  Chia-Hui Lin ,  Wei-Zen Chou

IPC分类号： G03F900

CPC分类号： G03F1/29 ,  G03F1/32

摘要： A simple, cost-effective method for forming a lithography mask with a directly imaged portion and an attenuated, phase shifted portion. In particular, the use of such a method for forming an outrigger-type phase shift mask. The mask is formed on a blank consisting of a transparent quartz substrate over which is an attenuating phase shift layer and an optically opaque layer, by a process that produces a pattern in an E-beam sensitive resist with two different E-beam energy depositions. The higher energy deposition is used to form the main pattern, while the lower energy deposition forms the pattern for the outrigger.

摘要翻译： 用于形成具有直接成像部分和衰减的相移部分的光刻掩模的简单，成本有效的方法。 特别地，使用这种用于形成外伸支架型相移掩模的方法。 通过在具有两个不同电子束能量沉积的电子束敏感抗蚀剂中产生图案的工艺，将掩模形成在由透明石英基板构成的空白上，该透明石英基板是衰减相移层和光不透明层。 较高的能量沉积用于形成主图案，而较低的能量沉积形成外伸支架的图案。

公开(公告)号：US06190809B1

公开(公告)日：2001-02-20

申请号：US09421518

申请日：1999-10-20

申请人： San-De Tzu ,  Ching-Shiun Chiu ,  Wei-Zen Chou

发明人： San-De Tzu ,  Ching-Shiun Chiu ,  Wei-Zen Chou

IPC分类号： G03F900

CPC分类号： G03F1/29 ,  G03F1/30

摘要： A mask combining an alternating phase shift part and an attenuating phase shift part on a single blank and a method of forming said mask. The method involves fewer processing steps, fewer layers of material and is more cost effective than other methods in the current art. A central reason for the simplicity of the method is the use of different intensity levels of E-beam exposure in a single resist layer and achieving phase shifts by transmitting radiation through alternating regions of the same transparent substrate that are etched and not etched.

摘要翻译： 一种在单个坯料上组合交替相移部分和衰减相移部分的掩模和形成所述掩模的方法。 该方法涉及较少的加工步骤，更少的材料层并且比现有技术中的其它方法更具成本效益。 该方法的简单性的中心原因是在单个抗蚀剂层中使用不同强度水平的电子束曝光，并且通过将相同的透明衬底的被蚀刻和未蚀刻的交替区域透射辐射来实现相移。

公开(公告)号：US06261725B1

公开(公告)日：2001-07-17

申请号：US09428572

申请日：1999-10-28

申请人： San-De Tzu ,  Wei-Zen Chou ,  Ching-Shiun Chiu

发明人： San-De Tzu ,  Wei-Zen Chou ,  Ching-Shiun Chiu

IPC分类号： G03F900

CPC分类号： G03F7/70283 ,  G03F1/32

摘要： A method for modulating the phase angle of a phase shift mask employed in deep ultraviolet (DUV) photolithography. There is provided a quartz substrate within which may be formed an engraved pattern, and upon which is formed a patterned phase shift layer. The phase angle of the phase shift layer upon the quartz substrate may be incrementally increased or decreased by subtractive etching of the phase shift layer and quartz substrate of the phase shift mask in an alkaline solution at a selected temperature and concentration for a period of time.

摘要翻译： 用于调制在深紫外（DUV）光刻中使用的相移掩模的相位角的方法。 提供了一个石英衬底，其中可以形成雕刻图案，并在其上形成图案化相移层。 通过在碱性溶液中在选定的温度和浓度下对相移掩模的相移层和石英衬底进行减蚀蚀刻一段时间，可以增加或减少相移层上石英衬底的相位角。

公开(公告)号：US06872507B2

公开(公告)日：2005-03-29

申请号：US10286231

申请日：2002-11-01

申请人： San-De Tzu ,  Ching Shiun Chiu ,  Wei-Zen Chou ,  Chia Fang Wu

发明人： San-De Tzu ,  Ching Shiun Chiu ,  Wei-Zen Chou ,  Chia Fang Wu

IPC分类号： G03C5/00 ,  G03F7/20 ,  G03F9/00 ,  H01J37/302

CPC分类号： H01J37/3026 ,  G03F1/78 ,  H01J2237/31771 ,  Y10S430/143

摘要： A method for forming a patterned microelectronics layer employing electron beam lithography in a sensitive material upon a substrate with optimal correction for proximity effects resulting from electron back scattering into the resist material. There is provided a substrate having formed thereon a layer of resist material sensitive to electron beam exposure. There is then exposed the sensitive layer to a vector scan shaped electron beam to write a primary pattern with dose correction of the beam dose for proximity effects due to electron scattering at each point in the primary pattern. There is then written a secondary pattern which is a negative reversed image of the primary pattern in a secondary exposure employing a vector scan shaped focused electron beam at an exposure dose substantially below the primary beam dose, there being provided a gap between the primary pattern and the secondary pattern. There is then developed the primary pattern in the sensitive resist layer to form the final corrected pattern on the substrate. The patterned layer of resist material may be employed directly on the substrate on which it is formed, or alternatively the patterned resist layer may be employed formed over an opaque layer upon the transparent substrate and subsequently the pattern etched into the opaque layer to form a photomask.

摘要翻译： 在感光材料中使用电子束光刻在衬底上形成图案化微电子层的方法，其具有由电子反射散射到抗蚀剂材料中的邻近效应的最佳校正。 提供了在其上形成有对电子束曝光敏感的抗蚀剂材料层的衬底。 然后将敏感层暴露于矢量扫描形状的电子束，以由于原始图案中的每个点处的电子散射而对用于邻近效应的光束剂量的剂量校正来写入初始图案。 然后，在基本上低于初级光束剂量的曝光剂量下，使用矢量扫描形聚焦电子束的二次曝光中的主要图案的负反转图像写入二次图案，提供了主图案和 次要模式。 然后在敏感抗蚀剂层中形成主要图案，以在基底上形成最终的校正图案。 抗蚀剂材料的图案化层可以直接用于在其上形成的衬底上，或者可选地，图案化的抗蚀剂层可以形成在透明衬底上的不透明层上，随后将图案蚀刻到不透明层中以形成光掩模 。

公开(公告)号：US06277528B1

公开(公告)日：2001-08-21

申请号：US09489499

申请日：2000-01-21

申请人： San-De Tzu ,  Wei-Zen Chou

发明人： San-De Tzu ,  Wei-Zen Chou

IPC分类号： G03F900

CPC分类号： G03F7/70283 ,  G03F1/32

摘要： A method of forming a high transmittance attenuated phase-shifting mask blank, comprising the following steps. An attenuated phase-shifting mask is provided that includes a shifter layer overlying a transparent substrate. The attenuated phase-shifting mask having a first transmittance and an initial phase angle. The attenuated phase-shifting mask and more specifically the shifter layer is treated with an aqueous solution of NH4OH:H2O2 for a first predetermined time increasing the first transmittance to a second transmittance and decreasing the initial phase angle to a second phase angle. The attenuated phase-shifting mask is then treated with a selected acid or base for a second predetermined time increasing the second transmittance to a third, predetermined transmittance and increasing the phase angle to a third, predetermined phase angle. The third phase angle is preferably substantially identical to the initial phase angle.

摘要翻译： 一种形成高透光率衰减相移掩模坯料的方法，包括以下步骤。 提供了一种衰减的相移掩模，其包括覆盖透明衬底的移位层。 衰减相移掩模具有第一透射率和初始相位角。 衰减相移掩模，更具体地，移位层用NH 4 OH:H 2 O 2的水溶液处理第一预定时间，将第一透射率增加到第二透射率，并将初始相位角减小到第二相位角。 然后将衰减的相移掩模用选定的酸或碱处理第二预定时间，将第二透射率提高到第三预定透射率，并将相位角增加到第三预定相位角。 优选地，第三相位角基本上与初始相位角相同。

公开(公告)号：US5888678A

公开(公告)日：1999-03-30

申请号：US20502

申请日：1998-02-09

申请人： San-De Tzu ,  Chia-Hui Lin ,  Wen-Hong Huang ,  Ching-Chia Lin

发明人： San-De Tzu ,  Chia-Hui Lin ,  Wen-Hong Huang ,  Ching-Chia Lin

IPC分类号： G03F1/00 ,  G03F1/29 ,  G03F9/00

CPC分类号： G03F1/29

摘要： A mask and a method of forming a mask having a binary mask pattern in a first region of a transparent mask substrate and a rim type attenuating phase shifting mask pattern in a second region of the same transparent mask substrate. The rim type attenuating phase shifting mask pattern is used to form small contact holes and the binary mask pattern is used to form larger contact holes in an integrated circuit wafer. The use of the rim type attenuating phase shifting mask pattern and the binary mask pattern avoids the problems due to side lobe effect for cases where different size contact holes are required on the same layer in an integrated circuit wafer. The formation of the rim type attenuating phase shifting mask pattern and the binary mask pattern on the same transparent mask substrate increases throughput and decreases cost in the fabrication of integrated circuit wafers.

摘要翻译： 在相同的透明掩模基板的第二区域中，在透明掩模基板的第一区域中形成具有二元掩模图案的掩模和边缘型衰减相移掩模图案的掩模和方法。 边缘型衰减相移掩模图案用于形成小的接触孔，并且二进制掩模图案用于在集成电路晶片中形成更大的接触孔。 使用边缘型衰减相移掩模图案和二进制掩模图案避免了在集成电路晶片的同一层上需要不同尺寸的接触孔的情况下由于旁瓣效应引起的问题。 在相同的透明掩模基板上形成边缘型衰减相移掩模图案和二进制掩模图案增加了集成电路晶片的制造中的吞吐量并降低了成本。

公开(公告)号：US5783337A

公开(公告)日：1998-07-21

申请号：US856786

申请日：1997-05-15

申请人： San-De Tzu ,  Chih-Chiang Tu ,  Wen-Hong Huang ,  Chia-Hui Lin

发明人： San-De Tzu ,  Chih-Chiang Tu ,  Wen-Hong Huang ,  Chia-Hui Lin

IPC分类号： G03F1/32 ,  G03F9/00

CPC分类号： G03F1/32

摘要： A new process for fabricating an attenuated phase-shifting photomask is described. A photomask blank is provided comprising a phase-shifting layer overlying a substrate, a chromium layer overlying the phase-shifting layer, and a resist layer overlying the chromium layer. The resist layer of the photomask blank is exposed to electron-beam energy wherein a main pattern area of the photomask blank is exposed to a first dosage of the electron-beam energy and wherein a border area surrounding the main pattern area is not exposed to the electron-beam energy and wherein a secondary pattern area between the main pattern area and the border area is exposed to a second dosage of electron-beam energy wherein the second dosage is lower than the first dosage. The exposed resist layer is developed wherein the resist within the main pattern area is removed to expose the chromium layer. The exposed chromium layer is etched through to expose the underlying phase-shifting layer. The exposed phase-shifting layer is etched through to expose the substrate. The resist overlying the chromium layer within the secondary pattern area is etched away. The chromium layer within the secondary pattern area is etched away. The resist within the border area is stripped away to leave a patterned phase-shifting layer in the main pattern area and a chromium layer in the border area to complete fabrication of the attenuated phase-shifting photomask.

摘要翻译： 描述了制造衰减相移光掩模的新工艺。 提供了一种光掩模坯料，其包括覆盖衬底的相移层，覆盖在相移层上的铬层和覆盖在铬层上的抗蚀剂层。 光掩模坯料的抗蚀剂层暴露于电子束能量，其中光掩模坯料的主图案区域暴露于第一剂量的电子束能量，并且其中围绕主图案区域的边界区域不暴露于 电子束能量，其中主图案区域和边界区域之间的次级图案区域暴露于第二剂量的电子束能量，其中第二剂量低于第一剂量。 显影曝光的抗蚀剂层，其中去除主图案区域内的抗蚀剂以暴露铬层。 暴露的铬层被蚀刻通过以暴露下面的相移层。 暴露的相移层被蚀刻以暴露衬底。 覆盖二次图案区域内的铬层的抗蚀剂被蚀刻掉。 二次图案区域内的铬层被蚀刻掉。 边界区域内的抗蚀剂被剥离，在主图案区域中留下图案化的相移层和边界区域中的铬层，以完成衰减的相移光掩模的制造。

公开(公告)号：US6051347A

公开(公告)日：2000-04-18

申请号：US270595

申请日：1999-03-18

申请人： San-De Tzu ,  Chia-Hui Lin

发明人： San-De Tzu ,  Chia-Hui Lin

IPC分类号： G03F7/20 ,  G03C5/00

CPC分类号： G03F7/70441 ,  Y10S430/143

摘要： A method of correcting, or compensating for errors encountered in the transfer of patterns is disclosed for use with high resolution e-beam lithography. In a first embodiment, optical proximity effects are incorporated into the e-beam proximity effects by superimposing the two effects to arrive at a compensated dosage level database to produce the desired patterns. In a second embodiment, etching effects are also superimposed on the previous driving database by compensating the e-beam proximity data twice, that is, by over correcting it, to further improve the transfer of patterns without the undesirable effects. It is shown that corrections for a number of other process steps can also be incorporated into the database that drives the e-beam lithography machine in order to achieve high resolution patterns of about one-quarter-micron technology.

摘要翻译： 公开了一种校正或补偿在图案传送中遇到的错误的方法，用于高分辨率电子束光刻。 在第一实施例中，通过叠加两个效应来将光学邻近效应并入到电子束邻近效应中，以得到补偿剂量水平数据库以产生期望的图案。 在第二实施例中，通过补偿电子束邻近数据两次，即通过对其进行过度校正，也可以对先前的驱动数据库叠加蚀刻效果，以进一步改善图案的传送而不产生不良影响。 显示出许多其他工艺步骤的校正也可以并入驱动电子束光刻机的数据库中，以实现约四分之一微米技术的高分辨率图案。

公开(公告)号：US5858591A

公开(公告)日：1999-01-12

申请号：US17407

申请日：1998-02-02

申请人： Chia Hui Lin ,  San-De Tzu ,  Chih-Chiang Tu

发明人： Chia Hui Lin ,  San-De Tzu ,  Chih-Chiang Tu

IPC分类号： G03F1/00 ,  H05K3/00 ,  G03F9/00 ,  G03C5/00

CPC分类号： H05K3/0005 ,  G03F1/36 ,  H05K2201/09272 ,  H05K3/0082

摘要： Improvement in the quality of photoresist images has been achieved. The data file in which the full description of the photoresist image, including Optical Proximity Corrections, has been stored is split into two subfiles. The split is made on the basis of separating cell descriptions (where the density of lines is high) from peripheral area descriptions (where lines tend to be isolated). A suitable bias in the form of a small increase or decrease (as appropriate) of all dimensions in the subfile is then applied. After the application of bias, the subfiles are merged back into a single data file and processing proceeds as usual.

摘要翻译： 已经实现了光刻胶图像质量的提高。 已经存储了包括光学邻近校正的光致抗蚀剂图像的完整描述的数据文件被分成两个子文件。 分割是基于从周边区域描述（其中线路被孤立的）分离单元描述（其中线的密度高）的基础。 然后应用子文件中所有维度的小增加或减小（适当时）形式的合适偏差。 应用偏倚之后，子文件被合并回单个数据文件，处理按照惯例进行。