公开(公告)号：US06294295B1

公开(公告)日：2001-09-25

申请号：US09519612

申请日：2000-03-06

申请人： Chia-Hui Lin ,  San-De Tzu ,  Wei-Zen Chou

发明人： Chia-Hui Lin ,  San-De Tzu ,  Wei-Zen Chou

IPC分类号： G03F900

CPC分类号： G03F1/32 ,  G03F1/26 ,  G03F1/29

摘要： This invention describes an attenuating phase shifting mask, a method of forming the attenuating phase shifting mask, and a method of using the attenuating phase shifting mask to expose a contact hole pattern having both dense and isolated contact holes on a layer of photosensitive dielectric. The mask has a rim of first attenuating phase shifting material, having a first transmittance and providing a phase shift of 180°, surrounding the dense holes and a rim of second attenuating phase shifting material, having a second transmittance and providing a phase shift of 180°, surrounding the isolated holes. The second transmittance is greater than the first transmittance. The dense holes have a duty ratio of less than 2.0 and the isolated holes have a duty ratio of greater than or equal to 2.0. The second attenuating phase shifting material results from treating the first attenuating phase shifting material for a first time with a first solution which increases the transmittance and changes the phase shift. The attenuating phase shifting material is then treated with a second solution for a second time to restore the phase shift to 180° and further increase the transmittance.

摘要翻译： 本发明描述了衰减相移掩模，形成衰减相移掩模的方法，以及使用衰减相移掩模来曝光在光敏电介质层上具有密集和隔离接触孔的接触孔图案的方法。 掩模具有第一衰减相移材料的边缘，具有第一透射率并且提供180°的相移，围绕致密孔和第二衰减相移材料的边缘，具有第二透射率并提供180°的相移 °，围绕隔离孔。 第二透射率大于第一透射率。 密孔的占空比小于2.0，隔离孔的占空比大于或等于2.0。 第二衰减相移材料是通过用提高透射率并改变相移的第一溶液第一次处理第一衰减相移材料产生的。 然后衰减相移材料用第二溶液处理第二次以将相移恢复到180°并进一步增加透射率。

公开(公告)号：US06251547B1

公开(公告)日：2001-06-26

申请号：US09422180

申请日：1999-10-22

申请人： San-De Tzu ,  Chia-Hui Lin ,  Wei-Zen Chou

发明人： San-De Tzu ,  Chia-Hui Lin ,  Wei-Zen Chou

IPC分类号： G03F900

CPC分类号： G03F1/29 ,  G03F1/32

摘要： A simple, cost-effective method for forming a lithography mask with a directly imaged portion and an attenuated, phase shifted portion. In particular, the use of such a method for forming an outrigger-type phase shift mask. The mask is formed on a blank consisting of a transparent quartz substrate over which is an attenuating phase shift layer and an optically opaque layer, by a process that produces a pattern in an E-beam sensitive resist with two different E-beam energy depositions. The higher energy deposition is used to form the main pattern, while the lower energy deposition forms the pattern for the outrigger.

摘要翻译： 用于形成具有直接成像部分和衰减的相移部分的光刻掩模的简单，成本有效的方法。 特别地，使用这种用于形成外伸支架型相移掩模的方法。 通过在具有两个不同电子束能量沉积的电子束敏感抗蚀剂中产生图案的工艺，将掩模形成在由透明石英基板构成的空白上，该透明石英基板是衰减相移层和光不透明层。 较高的能量沉积用于形成主图案，而较低的能量沉积形成外伸支架的图案。

公开(公告)号：US06261725B1

公开(公告)日：2001-07-17

申请号：US09428572

申请日：1999-10-28

申请人： San-De Tzu ,  Wei-Zen Chou ,  Ching-Shiun Chiu

发明人： San-De Tzu ,  Wei-Zen Chou ,  Ching-Shiun Chiu

IPC分类号： G03F900

CPC分类号： G03F7/70283 ,  G03F1/32

摘要： A method for modulating the phase angle of a phase shift mask employed in deep ultraviolet (DUV) photolithography. There is provided a quartz substrate within which may be formed an engraved pattern, and upon which is formed a patterned phase shift layer. The phase angle of the phase shift layer upon the quartz substrate may be incrementally increased or decreased by subtractive etching of the phase shift layer and quartz substrate of the phase shift mask in an alkaline solution at a selected temperature and concentration for a period of time.

摘要翻译： 用于调制在深紫外（DUV）光刻中使用的相移掩模的相位角的方法。 提供了一个石英衬底，其中可以形成雕刻图案，并在其上形成图案化相移层。 通过在碱性溶液中在选定的温度和浓度下对相移掩模的相移层和石英衬底进行减蚀蚀刻一段时间，可以增加或减少相移层上石英衬底的相位角。

公开(公告)号：US06190809B1

公开(公告)日：2001-02-20

申请号：US09421518

申请日：1999-10-20

申请人： San-De Tzu ,  Ching-Shiun Chiu ,  Wei-Zen Chou

发明人： San-De Tzu ,  Ching-Shiun Chiu ,  Wei-Zen Chou

IPC分类号： G03F900

CPC分类号： G03F1/29 ,  G03F1/30

摘要： A mask combining an alternating phase shift part and an attenuating phase shift part on a single blank and a method of forming said mask. The method involves fewer processing steps, fewer layers of material and is more cost effective than other methods in the current art. A central reason for the simplicity of the method is the use of different intensity levels of E-beam exposure in a single resist layer and achieving phase shifts by transmitting radiation through alternating regions of the same transparent substrate that are etched and not etched.

摘要翻译： 一种在单个坯料上组合交替相移部分和衰减相移部分的掩模和形成所述掩模的方法。 该方法涉及较少的加工步骤，更少的材料层并且比现有技术中的其它方法更具成本效益。 该方法的简单性的中心原因是在单个抗蚀剂层中使用不同强度水平的电子束曝光，并且通过将相同的透明衬底的被蚀刻和未蚀刻的交替区域透射辐射来实现相移。

公开(公告)号：US06872507B2

公开(公告)日：2005-03-29

申请号：US10286231

申请日：2002-11-01

申请人： San-De Tzu ,  Ching Shiun Chiu ,  Wei-Zen Chou ,  Chia Fang Wu

发明人： San-De Tzu ,  Ching Shiun Chiu ,  Wei-Zen Chou ,  Chia Fang Wu

IPC分类号： G03C5/00 ,  G03F7/20 ,  G03F9/00 ,  H01J37/302

CPC分类号： H01J37/3026 ,  G03F1/78 ,  H01J2237/31771 ,  Y10S430/143

摘要： A method for forming a patterned microelectronics layer employing electron beam lithography in a sensitive material upon a substrate with optimal correction for proximity effects resulting from electron back scattering into the resist material. There is provided a substrate having formed thereon a layer of resist material sensitive to electron beam exposure. There is then exposed the sensitive layer to a vector scan shaped electron beam to write a primary pattern with dose correction of the beam dose for proximity effects due to electron scattering at each point in the primary pattern. There is then written a secondary pattern which is a negative reversed image of the primary pattern in a secondary exposure employing a vector scan shaped focused electron beam at an exposure dose substantially below the primary beam dose, there being provided a gap between the primary pattern and the secondary pattern. There is then developed the primary pattern in the sensitive resist layer to form the final corrected pattern on the substrate. The patterned layer of resist material may be employed directly on the substrate on which it is formed, or alternatively the patterned resist layer may be employed formed over an opaque layer upon the transparent substrate and subsequently the pattern etched into the opaque layer to form a photomask.

摘要翻译： 在感光材料中使用电子束光刻在衬底上形成图案化微电子层的方法，其具有由电子反射散射到抗蚀剂材料中的邻近效应的最佳校正。 提供了在其上形成有对电子束曝光敏感的抗蚀剂材料层的衬底。 然后将敏感层暴露于矢量扫描形状的电子束，以由于原始图案中的每个点处的电子散射而对用于邻近效应的光束剂量的剂量校正来写入初始图案。 然后，在基本上低于初级光束剂量的曝光剂量下，使用矢量扫描形聚焦电子束的二次曝光中的主要图案的负反转图像写入二次图案，提供了主图案和 次要模式。 然后在敏感抗蚀剂层中形成主要图案，以在基底上形成最终的校正图案。 抗蚀剂材料的图案化层可以直接用于在其上形成的衬底上，或者可选地，图案化的抗蚀剂层可以形成在透明衬底上的不透明层上，随后将图案蚀刻到不透明层中以形成光掩模 。

公开(公告)号：US06277528B1

公开(公告)日：2001-08-21

申请号：US09489499

申请日：2000-01-21

申请人： San-De Tzu ,  Wei-Zen Chou

发明人： San-De Tzu ,  Wei-Zen Chou

IPC分类号： G03F900

CPC分类号： G03F7/70283 ,  G03F1/32

摘要： A method of forming a high transmittance attenuated phase-shifting mask blank, comprising the following steps. An attenuated phase-shifting mask is provided that includes a shifter layer overlying a transparent substrate. The attenuated phase-shifting mask having a first transmittance and an initial phase angle. The attenuated phase-shifting mask and more specifically the shifter layer is treated with an aqueous solution of NH4OH:H2O2 for a first predetermined time increasing the first transmittance to a second transmittance and decreasing the initial phase angle to a second phase angle. The attenuated phase-shifting mask is then treated with a selected acid or base for a second predetermined time increasing the second transmittance to a third, predetermined transmittance and increasing the phase angle to a third, predetermined phase angle. The third phase angle is preferably substantially identical to the initial phase angle.

摘要翻译： 一种形成高透光率衰减相移掩模坯料的方法，包括以下步骤。 提供了一种衰减的相移掩模，其包括覆盖透明衬底的移位层。 衰减相移掩模具有第一透射率和初始相位角。 衰减相移掩模，更具体地，移位层用NH 4 OH:H 2 O 2的水溶液处理第一预定时间，将第一透射率增加到第二透射率，并将初始相位角减小到第二相位角。 然后将衰减的相移掩模用选定的酸或碱处理第二预定时间，将第二透射率提高到第三预定透射率，并将相位角增加到第三预定相位角。 优选地，第三相位角基本上与初始相位角相同。

公开(公告)号：US20050089765A1

公开(公告)日：2005-04-28

申请号：US10694426

申请日：2003-10-27

申请人： Fei-Gwo Tsai ,  Wei-Zen Chou ,  Zong-Xian Tsai

发明人： Fei-Gwo Tsai ,  Wei-Zen Chou ,  Zong-Xian Tsai

IPC分类号： G03C5/00 ,  G03F1/14 ,  G03F9/00

CPC分类号： G03F1/80 ,  G03F1/36

摘要： The invention calculates an optimum etch recipe for etching a product pattern in an opaque material of a photolithographic exposure mask with the objective of achieving optimum CD performance of the product pattern. If, for this optimum etch recipe, the optimum CD performance cannot be achieved, dummy patterns are added to the mask that is used to etch the opaque material. If this latter approach still cannot achieve optimum CD performance, the product pattern to which the dummy pattern has been added is separated into two patterns such that one of these two patterns provides a Cr loading that assures optimum CD performance of the product pattern.

摘要翻译： 本发明计算用于蚀刻光刻曝光掩模的不透明材料中的产品图案的最佳蚀刻配方，目的是实现产品图案的最佳CD性能。 如果对于该最佳蚀刻配方，无法实现最佳的CD性能，则将虚拟图案添加到用于蚀刻不透明材料的掩模中。 如果后一种方法仍然不能实现最佳的CD性能，则将虚拟图案添加到其中的产品图案被分成两种图案，使得这两种图案中的一种提供了Cr加载，以确保产品图案的最佳CD性能。

公开(公告)号：US07037628B2

公开(公告)日：2006-05-02

申请号：US10694426

申请日：2003-10-27

申请人： Fei-Gwo Tsai ,  Wei-Zen Chou ,  Zong-Xian Tsai

发明人： Fei-Gwo Tsai ,  Wei-Zen Chou ,  Zong-Xian Tsai

IPC分类号： G01F9/00

CPC分类号： G03F1/80 ,  G03F1/36

摘要： The invention calculates an optimum etch recipe for etching a product pattern in an opaque material of a photolithographic exposure mask with the objective of achieving optimum CD performance of the product pattern. If, for this optimum etch recipe, the optimum CD performance cannot be achieved, dummy patterns are added to the mask that is used to etch the opaque material. If this latter approach still cannot achieve optimum CD performance, the product pattern to which the dummy pattern has been added is separated into two patterns such that one of these two patterns provides a Cr loading that assures optimum CD performance of the product pattern.

摘要翻译： 本发明计算用于蚀刻光刻曝光掩模的不透明材料中的产品图案的最佳蚀刻配方，目的是实现产品图案的最佳CD性能。 如果对于该最佳蚀刻配方，无法实现最佳的CD性能，则将虚拟图案添加到用于蚀刻不透明材料的掩模中。 如果后一种方法仍然不能实现最佳的CD性能，则将虚拟图案添加到其中的产品图案被分成两种图案，使得这两种图案中的一种提供了Cr加载，以确保产品图案的最佳CD性能。

公开(公告)号：US06428938B1

公开(公告)日：2002-08-06

申请号：US09596900

申请日：2000-06-19

申请人： Chin-Hsiang Lin ,  Shy-Jay Lin ,  Sheng-Chi Chin ,  Wei-Zen Chou

发明人： Chin-Hsiang Lin ,  Shy-Jay Lin ,  Sheng-Chi Chin ,  Wei-Zen Chou

IPC分类号： G03F900

CPC分类号： G03F1/30

摘要： An improved phase-shift photomask and method of fabrication are described. The method for making this phase-shift mask involves depositing an opaque film, such as chromium (Cr), on a transparent plate, such as SiO2 (quartz plate). An electron beam photoresist layer is deposited on the Cr film and is partially exposed in regions A and completely exposed in closely spaced alternate regions B by an electron beam. The exposed photoresist is then developed. The Cr film is etched in regions B while the remaining resist in regions A protect the Cr from etching. The e-bean resist is plasma etched back to remove the resist over regions A and then the quartz plate in regions B is recessed to a depth d by plasma etching while the Cr protects the quartz in regions A from etching. The recess is etched to a depth to provide an optical path difference between A and B of ½ wavelength (180°) when UV light is transmitted through the mask to expose resist on a product substrate. This 180° phase-shift minimizes the diffracted light under the Cr film between regions A and B and improves the DOF and therefore the photoresist resolution. Since a single e-beam resist is used to make the mask it is more manufacturing cost effective with improved alignment accuracy between regions A and B.

摘要翻译： 描述了改进的相移光掩模和制造方法。 制造该相移掩模的方法包括在诸如SiO 2（石英板）的透明板上沉积不透明的膜，例如铬（Cr）。 电子束光致抗蚀剂层沉积在Cr膜上，并部分暴露在区域A中，并通过电子束完全暴露在紧密间隔的交替区域B中。 然后曝光的光刻胶显影。 在区域B中蚀刻Cr膜，而区域A中的剩余抗蚀剂保护Cr不被蚀刻。 等离子体蚀刻回蚀刻e-bean抗蚀剂以去除区域A上的抗蚀剂，然后通过等离子体蚀刻将区域B中的石英板凹入深度d，同时Cr保护区域A中的石英免受蚀刻。 当UV光通过掩模透射以暴露产品基底上的抗蚀剂时，凹陷被蚀刻到深度以提供½波长（180°）的A和B之间的光程差。 这种180°相移使区域A和B之间的Cr膜下的衍射光最小化，并且改善了DOF并因此改善了光刻胶分辨率。 由于使用单个电子束抗蚀剂来制造掩模，因此在区域A和区域B之间具有改善的对准精度是更具制造成本效益的。

公开(公告)号：US06361911B1

公开(公告)日：2002-03-26

申请号：US09550268

申请日：2000-04-17

申请人： Fei-Gwo Tsai ,  Wei-Zen Chou

发明人： Fei-Gwo Tsai ,  Wei-Zen Chou

IPC分类号： G03F900

CPC分类号： G03F7/70433 ,  G03F7/0755 ,  G03F7/0757 ,  H01J37/3026 ,  H01J2237/3175 ,  Y10S430/143

摘要： A new method is provided for E-beam exposure. A new method is provided for variable shaped E-beam (VSB) and Gaussian laser and E-beam exposure systems. The conventional main pattern is, under the method of the invention involving VSB, surrounded on all sides by a dummy frame whereby the dummy frame limits the beam size of the exposure shots that are adjacent to the main pattern. All patterns that are created in this manner are therefore composites using the same exposure shot. This improves the CD uniformity of the pattern by reducing the shot linearity error for VSB exposure systems. For Gaussian beam exposure systems, the exposure shots are at times located exactly over the exposed figure. Typically, gray level is used to simulate the small figure, this however induces proximity effects. The method of the invention therefore also improves the proximity effect of the Gaussian beam exposure systems.

摘要翻译： 为电子束曝光提供了一种新的方法。 为变形电子束（VSB）和高斯激光和电子束曝光系统提供了一种新的方法。 传统的主要模式是在涉及VSB的本发明的方法下，通过虚拟框架在所有侧面上被围绕，由此虚设框限制了与主图案相邻的曝光镜头的光束尺寸。 因此，以这种方式创建的所有图案都是使用相同曝光拍摄的复合材料。 这通过降低VSB曝光系统的镜头线性误差来改善图案的CD均匀性。 对于高斯光束曝光系统，曝光镜头的位置有时恰好在曝光图上。 通常，灰度级用于模拟小数字，但是这会引起邻近效应。 因此，本发明的方法也改善了高斯束曝光系统的邻近效应。