公开(公告)号：US10055267B2

公开(公告)日：2018-08-21

申请号：US14638860

申请日：2015-03-04

Applicant: SanDisk Technologies LLC

Inventor： Dinesh Kumar Agarwal ,  Ramkumar Ramamurthy ,  Vijay Sivasankaran

IPC: G06F3/06 ,  G06F11/00 ,  G11C29/08 ,  G11C29/44 ,  G11C29/00 ,  G11C8/12 ,  G11C16/08 ,  G11C29/04

CPC classification number: G06F11/00 ,  G11C8/12 ,  G11C16/08 ,  G11C29/08 ,  G11C29/4401 ,  G11C29/76 ,  G11C2029/0409

Abstract: In a non-volatile memory system, such as flash memory, when selecting a block for write operation, the system selects blocks from a free block list (FBL). The memory circuits of non-volatile systems often experience cluster failures, where multiple blocks of a physical region are bad. If the free block list is loaded with blocks from a region having a cluster failure, this can result in multiple back to back write errors. To help avoid this situation, the blocks of a memory array are divided into physical zones and, when selecting blocks to replenish the free block list, blocks are chosen cyclically from the zones.