公开(公告)号：US20180293014A1

公开(公告)日：2018-10-11

申请号：US15483185

申请日：2017-04-10

Applicant: SanDisk Technologies LLC

Inventor： Narendhiran Chinnaanangur Ravimohan ,  Muralitharan Jayaraman ,  Balakumar Rajendran ,  Satya Kesav Gundabathula ,  Ramkumar Ramamurthy ,  Rohit Sathyanarayan

IPC: G06F3/06 ,  G11C16/10 ,  G11C16/30 ,  G11C16/34

CPC classification number: G06F3/0631 ,  G06F3/061 ,  G06F3/0626 ,  G06F3/0653 ,  G06F3/0679 ,  G11C11/5628 ,  G11C16/10 ,  G11C16/30 ,  G11C16/32 ,  G11C16/3459 ,  G11C2211/5641

Abstract: A memory system may be configured to perform immediate folding of data from a low storage density area to a high storage density area. A low storage density target area may be monitored, and when a capacity of the low storage density target area reaches a threshold level, data stored in the low storage density target area may be folded to an associated high storage density target area. The memory system may utilize a pointer system to manage the folding of data. The pointer system may also be utilized for read operations in order to avoid updating address mapping tables for both the low storage density and the high storage density areas.

公开(公告)号：US10055267B2

公开(公告)日：2018-08-21

申请号：US14638860

申请日：2015-03-04

Applicant: SanDisk Technologies LLC

Inventor： Dinesh Kumar Agarwal ,  Ramkumar Ramamurthy ,  Vijay Sivasankaran

IPC: G06F3/06 ,  G06F11/00 ,  G11C29/08 ,  G11C29/44 ,  G11C29/00 ,  G11C8/12 ,  G11C16/08 ,  G11C29/04

CPC classification number: G06F11/00 ,  G11C8/12 ,  G11C16/08 ,  G11C29/08 ,  G11C29/4401 ,  G11C29/76 ,  G11C2029/0409

Abstract: In a non-volatile memory system, such as flash memory, when selecting a block for write operation, the system selects blocks from a free block list (FBL). The memory circuits of non-volatile systems often experience cluster failures, where multiple blocks of a physical region are bad. If the free block list is loaded with blocks from a region having a cluster failure, this can result in multiple back to back write errors. To help avoid this situation, the blocks of a memory array are divided into physical zones and, when selecting blocks to replenish the free block list, blocks are chosen cyclically from the zones.

公开(公告)号：US10275170B2

公开(公告)日：2019-04-30

申请号：US15483185

申请日：2017-04-10

Applicant: SanDisk Technologies LLC

Inventor： Narendhiran Chinnaanangur Ravimohan ,  Muralitharan Jayaraman ,  Balakumar Rajendran ,  Satya Kesav Gundabathula ,  Ramkumar Ramamurthy ,  Rohit Sathyanarayan

IPC: G06F3/06 ,  G11C16/10 ,  G11C16/30 ,  G11C16/34

Abstract: A memory system may be configured to perform immediate folding of data from a low storage density area to a high storage density area. A low storage density target area may be monitored, and when a capacity of the low storage density target area reaches a threshold level, data stored in the low storage density target area may be folded to an associated high storage density target area. The memory system may utilize a pointer system to manage the folding of data. The pointer system may also be utilized for read operations in order to avoid updating address mapping tables for both the low storage density and the high storage density areas.