公开(公告)号：US20190006021A1

公开(公告)日：2019-01-03

申请号：US15637933

申请日：2017-06-29

Applicant: SanDisk Technologies LLC

Inventor： Ashish Ghai ,  Lakshmi Kalpana Vakati ,  Ekamdeep Singh ,  Gopinath Balakrishnan

IPC: G11C29/04 ,  G11C29/02 ,  G11C16/16 ,  G11C16/04 ,  G11C16/34 ,  G11C11/56

Abstract: A leakage current detection circuit is configured to perform an inter-block leakage current detection process to detect for leakage current between a select gate bias line associated with a first block and one or more word lines associated with a second block. During a time period, a first switching circuit may bias the select gate bias line of the first block with a first leakage detection voltage, and a second switching circuit may bias the word lines of the second block with a second leakage detection voltage. During this time period, a current sensing circuit may sense for leakage current in a global select gate bias line.

公开(公告)号：US20180061505A1

公开(公告)日：2018-03-01

申请号：US15246309

申请日：2016-08-24

Applicant: SanDisk Technologies LLC

Inventor： Ashish Ghai ,  Lakshmi Kalpana Vakati ,  Ekamdeep Singh ,  Chang Siau ,  Gopinath Balakrishnan ,  Kapil Verma

IPC: G11C16/34 ,  G11C16/04 ,  G11C16/16 ,  G11C16/08 ,  H01L27/115 ,  H01L27/24

CPC classification number: G11C16/3495 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/16 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/2481

Abstract: Technology is described herein for detecting a leakage current between a block select line and a conductive region that exists in multiple blocks of memory cells in a plane. The conductive region may be shared by at least one memory cell in multiple blocks. One example of the conductive region is a common source line that includes one or more local source lines and one or more global source lines. If the leakage current were to become high enough, the electrical short between the conductive region and the block select line could cause a plane level failure. If the leakage current is less than an amount that would cause a plane failure, but that indicates that the non-volatile memory device is susceptible to a plane failure, data may be moved out of the plane before the plane failure occurs. Thus, data loss may be prevented.

公开(公告)号：US09905307B1

公开(公告)日：2018-02-27

申请号：US15246309

申请日：2016-08-24

Applicant: SanDisk Technologies LLC

Inventor： Ashish Ghai ,  Lakshmi Kalpana Vakati ,  Ekamdeep Singh ,  Chang Siau ,  Gopinath Balakrishnan ,  Kapil Verma

IPC: G11C16/34 ,  G11C16/04 ,  G11C16/16 ,  G11C16/08 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/24

CPC classification number: G11C16/3495 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/16 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/2481

Abstract: Technology is described herein for detecting a leakage current between a block select line and a conductive region that exists in multiple blocks of memory cells in a plane. The conductive region may be shared by at least one memory cell in multiple blocks. One example of the conductive region is a common source line that includes one or more local source lines and one or more global source lines. If the leakage current were to become high enough, the electrical short between the conductive region and the block select line could cause a plane level failure. If the leakage current is less than an amount that would cause a plane failure, but that indicates that the non-volatile memory device is susceptible to a plane failure, data may be moved out of the plane before the plane failure occurs. Thus, data loss may be prevented.