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公开(公告)号：US11972815B2
公开(公告)日：2024-04-30
申请号：US17741182
申请日：2022-05-10
Applicant: SanDisk Technologies LLC
CPC classification number: G11C16/3459 , G11C16/08 , G11C16/102 , G11C16/26
Abstract: The memory device includes a controller that is configured to program a plurality of memory cells of a selected word line in a plurality of programming loops and count the number of programming loops to complete programming. The controller is also configured to compare the number of programming loops to complete programming of the memory cells of the selected word line to at least one of a predetermined upper limit and a predetermined lower limit to determine if a plane containing the selected word line is at an elevated risk for read failure. In response to the controller making a determination that the plane containing the selected word line is at an elevated risk for read failure, the controller is configured to conduct a post write read operation at least one word line of the plurality of word lines.
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公开(公告)号：US11894077B2
公开(公告)日：2024-02-06
申请号：US17678584
申请日：2022-02-23
Applicant: SanDisk Technologies LLC
CPC classification number: G11C16/3459 , G11C16/08 , G11C16/102 , G11C16/26 , G11C16/30
Abstract: A memory apparatus and operating method are provided. The apparatus includes memory cells connected to word lines and disposed in memory holes and configured to retain a threshold voltage. The memory holes are organized in rows grouped in strings. A control means is coupled to the word lines and the memory holes and programs the memory cells associated with a first one of the strings in a program operation and acquire a smart verify programming voltage in a smart verify operation including smart verify loops. The control means discards the smart verify programming voltage and determines another smart verify programming voltage in another smart verify operation on the memory cells associated with a second one of the strings in response to a quantity of the smart verify loops needed to complete programming of the memory cells associated with the first one of the strings being outside a predetermined threshold criteria.
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3.发明公开公开(公告)号：US20230268015A1
公开(公告)日：2023-08-24
申请号：US17678584
申请日：2022-02-23
Applicant: SanDisk Technologies LLC.
CPC classification number: G11C16/3459 , G11C16/102 , G11C16/26 , G11C16/08 , G11C16/30
Abstract: A memory apparatus and operating method are provided. The apparatus includes memory cells connected to word lines and disposed in memory holes and configured to retain a threshold voltage. The memory holes are organized in rows grouped in strings. A control means is coupled to the word lines and the memory holes and programs the memory cells associated with a first one of the strings in a program operation and acquire a smart verify programming voltage in a smart verify operation including smart verify loops. The control means discards the smart verify programming voltage and determines another smart verify programming voltage in another smart verify operation on the memory cells associated with a second one of the strings in response to a quantity of the smart verify loops needed to complete programming of the memory cells associated with the first one of the strings being outside a predetermined threshold criteria.
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公开(公告)号：US20230368851A1
公开(公告)日：2023-11-16
申请号：US17741182
申请日：2022-05-10
Applicant: SanDisk Technologies LLC
CPC classification number: G11C16/3459 , G11C16/102 , G11C16/26 , G11C16/08
Abstract: The memory device includes a controller that is configured to program a plurality of memory cells of a selected word line in a plurality of programming loops and count the number of programming loops to complete programming. The controller is also configured to compare the number of programming loops to complete programming of the memory cells of the selected word line to at least one of a predetermined upper limit and a predetermined lower limit to determine if a plane containing the selected word line is at an elevated risk for read failure. In response to the controller making a determination that the plane containing the selected word line is at an elevated risk for read failure, the controller is configured to conduct a post write read operation at least one word line of the plurality of word lines.
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