公开(公告)号：US20180350446A1

公开(公告)日：2018-12-06

申请号：US15677874

申请日：2017-08-15

Applicant: SanDisk Technologies LLC

Inventor： Narayan K ,  Sateesh Desireddi ,  Aneesh Puthoor ,  Dharmaraju Marenahally Krishna ,  Arun Thandapani ,  Divya Prasad ,  Thendral Murugaiyan ,  Piyush Dhotre

IPC: G11C29/38 ,  G11C29/44

Abstract: Non-volatile memory and processes for reprogramming data posing a potential reliability concern are provided. A process is provided for distinguishing between cross-temperature effects and read disturb effects as part of determining whether to perform a maintenance operation such as reprogramming. A process is provided that compensates for cross-temperature effects while testing to determine whether to perform a maintenance operation. Applying temperature compensation attempts to remove cross-temperature effects so that testing accurately detects whether read disturb has occurred, without the effects of temperature. By reducing cross-temperature effects, maintenance operations can be more accurately scheduled for memory that has experienced read disturb, as opposed to cross-temperature effects.

公开(公告)号：US10553301B2

公开(公告)日：2020-02-04

申请号：US15677874

申请日：2017-08-15

Applicant: SanDisk Technologies LLC

Inventor： Narayan K ,  Sateesh Desireddi ,  Aneesh Puthoor ,  Dharmaraju Marenahally Krishna ,  Arun Thandapani ,  Divya Prasad ,  Thendral Murugaiyan ,  Piyush Dhotre

IPC: G11C29/38 ,  G11C29/44 ,  G11C29/00 ,  G11C29/42 ,  G11C29/02 ,  G11C7/04 ,  G11C29/04

Abstract: Non-volatile memory and processes for reprogramming data posing a potential reliability concern are provided. A process is provided for distinguishing between cross-temperature effects and read disturb effects as part of determining whether to perform a maintenance operation such as reprogramming. A process is provided that compensates for cross-temperature effects while testing to determine whether to perform a maintenance operation. Applying temperature compensation attempts to remove cross-temperature effects so that testing accurately detects whether read disturb has occurred, without the effects of temperature. By reducing cross-temperature effects, maintenance operations can be more accurately scheduled for memory that has experienced read disturb, as opposed to cross-temperature effects.