公开(公告)号：US10553301B2

公开(公告)日：2020-02-04

申请号：US15677874

申请日：2017-08-15

Applicant: SanDisk Technologies LLC

Inventor： Narayan K ,  Sateesh Desireddi ,  Aneesh Puthoor ,  Dharmaraju Marenahally Krishna ,  Arun Thandapani ,  Divya Prasad ,  Thendral Murugaiyan ,  Piyush Dhotre

IPC: G11C29/38 ,  G11C29/44 ,  G11C29/00 ,  G11C29/42 ,  G11C29/02 ,  G11C7/04 ,  G11C29/04

Abstract: Non-volatile memory and processes for reprogramming data posing a potential reliability concern are provided. A process is provided for distinguishing between cross-temperature effects and read disturb effects as part of determining whether to perform a maintenance operation such as reprogramming. A process is provided that compensates for cross-temperature effects while testing to determine whether to perform a maintenance operation. Applying temperature compensation attempts to remove cross-temperature effects so that testing accurately detects whether read disturb has occurred, without the effects of temperature. By reducing cross-temperature effects, maintenance operations can be more accurately scheduled for memory that has experienced read disturb, as opposed to cross-temperature effects.

公开(公告)号：US20180350446A1

公开(公告)日：2018-12-06

申请号：US15677874

申请日：2017-08-15

Applicant: SanDisk Technologies LLC

Inventor： Narayan K ,  Sateesh Desireddi ,  Aneesh Puthoor ,  Dharmaraju Marenahally Krishna ,  Arun Thandapani ,  Divya Prasad ,  Thendral Murugaiyan ,  Piyush Dhotre

IPC: G11C29/38 ,  G11C29/44

Abstract: Non-volatile memory and processes for reprogramming data posing a potential reliability concern are provided. A process is provided for distinguishing between cross-temperature effects and read disturb effects as part of determining whether to perform a maintenance operation such as reprogramming. A process is provided that compensates for cross-temperature effects while testing to determine whether to perform a maintenance operation. Applying temperature compensation attempts to remove cross-temperature effects so that testing accurately detects whether read disturb has occurred, without the effects of temperature. By reducing cross-temperature effects, maintenance operations can be more accurately scheduled for memory that has experienced read disturb, as opposed to cross-temperature effects.

公开(公告)号：US09691485B1

公开(公告)日：2017-06-27

申请号：US15207151

申请日：2016-07-11

Applicant: SanDisk Technologies LLC

Inventor： Chittoor Devarajan Sunil Kumar ,  Divya Prasad ,  Piyush Anil Dhotre ,  Dharmaraju Marenahally Krishna ,  Thendral Murugaiyan ,  Arun Thandapani

IPC: G11C16/10 ,  G06F3/06

CPC classification number: G11C16/105 ,  G06F3/0619 ,  G06F3/0653 ,  G06F3/0688 ,  G11C16/20 ,  G11C16/22

Abstract: A storage system and method for marginal write-abort detection using a memory parameter change is provided. In one embodiment, a method for detecting a write abort is provided that is performed in a storage system having a memory. The method comprises reading a lower page in memory; determining if any data is written in the lower page; and in response to determining that no data is written in the lower page: increasing source voltage for memory cells in the lower page; re-reading the lower page; determining if a read failure exists in the re-read lower page; and in response to determining that a read failure exists in the re-read lower page, detecting a write abort. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.