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公开(公告)号：US20180350446A1
公开(公告)日：2018-12-06
申请号：US15677874
申请日：2017-08-15
Applicant: SanDisk Technologies LLC
Inventor： Narayan K , Sateesh Desireddi , Aneesh Puthoor , Dharmaraju Marenahally Krishna , Arun Thandapani , Divya Prasad , Thendral Murugaiyan , Piyush Dhotre
Abstract: Non-volatile memory and processes for reprogramming data posing a potential reliability concern are provided. A process is provided for distinguishing between cross-temperature effects and read disturb effects as part of determining whether to perform a maintenance operation such as reprogramming. A process is provided that compensates for cross-temperature effects while testing to determine whether to perform a maintenance operation. Applying temperature compensation attempts to remove cross-temperature effects so that testing accurately detects whether read disturb has occurred, without the effects of temperature. By reducing cross-temperature effects, maintenance operations can be more accurately scheduled for memory that has experienced read disturb, as opposed to cross-temperature effects.
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公开(公告)号：US20180173447A1
公开(公告)日：2018-06-21
申请号：US15381104
申请日：2016-12-16
Applicant: SanDisk Technologies LLC
Inventor： Henry Chin , Sateesh Desireddi , Dana Lee , Ashwin D T , Harshul Gupta , Parth Amin , Jia Li
IPC: G06F3/06
CPC classification number: G06F3/0634 , G06F3/0619 , G06F3/0632 , G06F3/0679 , G11C11/5642 , G11C16/0483 , G11C16/26
Abstract: Apparatuses, systems, methods, and computer program products are disclosed for dynamic read table generation. One apparatus includes a set of non-volatile storage cells. A controller for a set of non-volatile storage cells is configured to, in response to unsuccessfully reading a storage cell of the set of non-volatile storage cells using a parameter, read the storage cell using one or more shifted values. A controller for a set of non-volatile storage cells is configured to, in response to successfully reading a storage cell using one or more shifted values, add the one or more shifted values to a storage device.
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公开(公告)号：US10558381B2
公开(公告)日：2020-02-11
申请号：US15381104
申请日：2016-12-16
Applicant: SanDisk Technologies LLC
Inventor： Henry Chin , Sateesh Desireddi , Dana Lee , Ashwin D T , Harshul Gupta , Parth Amin , Jia Li
IPC: G06F3/06
Abstract: Apparatuses, systems, methods, and computer program products are disclosed for dynamic read table generation. One apparatus includes a set of non-volatile storage cells. A controller for a set of non-volatile storage cells is configured to, in response to unsuccessfully reading a storage cell of the set of non-volatile storage cells using a parameter, read the storage cell using one or more shifted values. A controller for a set of non-volatile storage cells is configured to, in response to successfully reading a storage cell using one or more shifted values, add the one or more shifted values to a storage device.
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公开(公告)号：US10553301B2
公开(公告)日：2020-02-04
申请号：US15677874
申请日：2017-08-15
Applicant: SanDisk Technologies LLC
Inventor： Narayan K , Sateesh Desireddi , Aneesh Puthoor , Dharmaraju Marenahally Krishna , Arun Thandapani , Divya Prasad , Thendral Murugaiyan , Piyush Dhotre
Abstract: Non-volatile memory and processes for reprogramming data posing a potential reliability concern are provided. A process is provided for distinguishing between cross-temperature effects and read disturb effects as part of determining whether to perform a maintenance operation such as reprogramming. A process is provided that compensates for cross-temperature effects while testing to determine whether to perform a maintenance operation. Applying temperature compensation attempts to remove cross-temperature effects so that testing accurately detects whether read disturb has occurred, without the effects of temperature. By reducing cross-temperature effects, maintenance operations can be more accurately scheduled for memory that has experienced read disturb, as opposed to cross-temperature effects.
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