公开(公告)号：US09929293B1

公开(公告)日：2018-03-27

申请号：US15479134

申请日：2017-04-04

Applicant: Sandia Corporation

Inventor： Jin K. Kim ,  John F. Klem ,  Eric A. Shaner ,  Benjamin Varberg Olson ,  Emil Andrew Kadlec ,  Anna Tauke-Pedretti ,  Torben Ray Fortune

IPC: H01L31/09 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/0224 ,  H01L31/109

CPC classification number: H01L31/035236 ,  H01L31/022408 ,  H01L31/03046 ,  H01L31/035281 ,  H01L31/109

Abstract: In a superlattice (SL) photodetector, each period of the SL includes first and second semiconductor layers having different compositions, at least one of which comprises indium arsenide (InAs). At least one of these two semiconductor layers has a graded composition. In embodiments, the first semiconductor layer comprises InAs and the second semiconductor layer is a graded layer comprising indium arsenide antimonide (InAsSb), wherein the antimony (Sb) concentration is varied. In examples, the Sb concentration in the second layer gradually increases from the top and bottom toward the middle of the layer.