公开(公告)号：US08750653B1

公开(公告)日：2014-06-10

申请号：US13871708

申请日：2013-04-26

Applicant: Sandia Corporation

Inventor： David W. Peters ,  Paul Davids ,  Darin Leonhardt ,  Jin K. Kim ,  Joel R. Wendt ,  John F. Klem

IPC: G02B6/00

CPC classification number: G01J1/42 ,  G01J5/0837 ,  G01J5/28 ,  H01L27/14652 ,  H01L31/02327 ,  H01L31/09

Abstract: An exemplary embodiment of the present invention is a photodetector comprising a semiconductor body, a periodically patterned metal nanoantenna disposed on a surface of the semiconductor body, and at least one electrode separate from the nanoantenna. The semiconductor body comprises an active layer in sufficient proximity to the nanoantenna for plasmonic coupling thereto. The nanoantenna is dimensioned to absorb electromagnetic radiation in at least some wavelengths not more than 12 μm that are effective for plasmonic coupling into the active layer. The electrode is part of an electrode arrangement for obtaining a photovoltage or photocurrent in operation under appropriate stimulation.

Abstract translation: 本发明的示例性实施例是一种光电检测器，其包括半导体本体，设置在半导体主体的表面上的周期性图案化的金属纳米天线以及与纳米天线分开的至少一个电极。 半导体主体包括足够接近纳米天线的有源层，用于等离子体耦合。 纳米天线的尺寸被设计成吸收对于等离子体激元耦合到有源层中有效的至少一些不大于12μm的波长的电磁辐射。 电极是用于在适当刺激下操作中获得光电压或光电流的电极装置的一部分。

公开(公告)号：US09929293B1

公开(公告)日：2018-03-27

申请号：US15479134

申请日：2017-04-04

Applicant: Sandia Corporation

Inventor： Jin K. Kim ,  John F. Klem ,  Eric A. Shaner ,  Benjamin Varberg Olson ,  Emil Andrew Kadlec ,  Anna Tauke-Pedretti ,  Torben Ray Fortune

IPC: H01L31/09 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/0224 ,  H01L31/109

CPC classification number: H01L31/035236 ,  H01L31/022408 ,  H01L31/03046 ,  H01L31/035281 ,  H01L31/109

Abstract: In a superlattice (SL) photodetector, each period of the SL includes first and second semiconductor layers having different compositions, at least one of which comprises indium arsenide (InAs). At least one of these two semiconductor layers has a graded composition. In embodiments, the first semiconductor layer comprises InAs and the second semiconductor layer is a graded layer comprising indium arsenide antimonide (InAsSb), wherein the antimony (Sb) concentration is varied. In examples, the Sb concentration in the second layer gradually increases from the top and bottom toward the middle of the layer.