摘要:
Disclosed are a dynamic random access memory (DRAM) device, an on-die termination (ODT) resistance value setting method thereof, and a computer program therefor, and the DRAM device includes at least one DRAM module and a memory controller configured to measure a resistance value of an ODT resistor corresponding to one of a rank included in the DRAM module, a chipset included in the rank, and a DQ included in the chipset and set a resistance value of an ODT resistor corresponding to one of the rank, the chipset, and the DQ on the basis of the measured resistance value.
摘要:
Disclosed are a dynamic random access memory (DRAM) device, an on-die termination (ODT) resistance value setting method thereof, and a computer program therefor, and the DRAM device includes at least one DRAM module and a memory controller configured to measure a resistance value of an ODT resistor corresponding to one of a rank included in the DRAM module, a chipset included in the rank, and a DQ included in the chipset and set a resistance value of an ODT resistor corresponding to one of the rank, the chipset, and the DQ on the basis of the measured resistance value.
摘要:
Disclosed are a dynamic random access memory (DRAM) device, an on-die termination (ODT) resistance value setting method thereof, and a computer program therefor, and the DRAM device includes at least one DRAM module and a memory controller configured to measure a resistance value of an ODT resistor corresponding to one of a rank included in the DRAM module, a chipset included in the rank, and a DQ included in the chipset and set a resistance value of an ODT resistor corresponding to one of the rank, the chipset, and the DQ on the basis of the measured resistance value.
摘要:
A circuit with fuses and a semiconductor device having the same circuit include a first switch connected to a power supply voltage or a signal input terminal and turned on in response to a first pulse signal, a second switch connected to a ground voltage and turned on in response to a second pulse signal, a fuse connected between the first switch and the second switch, and a signal generating circuit for producing the first and second pulse signals. The first pulse signal turns off the first switch before the second pulse signal turns on the second switch and the first pulse signal turns on the first switch after the second pulse signal turns off the second switch.
摘要:
There is provided a voltage measurement device that is stable with respect to an undershot or overshot input voltage of a pad. The voltage measurement device includes a voltage line, a pad, a signal generating unit, a first switch, and a second switch. The first switch is connected between the pad and the second switch and the second switch is connected to the voltage line. The signal generating unit receives a control signal and generates an inverted control signal. The voltage line is connected to the pad through the first and second switches that are responsive to the control signal. The pad is also connected to an internal circuit block, so that the internal circuit block is driven according to a pad input. Specifically, the first and second switches can be implemented with an NMOS transistor and a PMOS transistor that are responsive to the control signal and the inverted control signal, respectively. Therefore, even if a logic level input to the pad is an undershot or overshot voltage level, a voltage level of the voltage line is not changed.
摘要:
An UV-curable coating composition for a flow coating comprises about 20 to about 35 parts by weight of an aliphatic urethane acrylate oligomer having an unsaturated group; about 15 to about 25 parts by weight of an acrylate monomer having a trifunctional or tetrafuntional unsaturated group; about 1 to about 4 parts by weight of an additive agent including an UV absorbent and a light stabilizer; about 1 to about 3 parts by weight of a photoinitiator; and about 38 to about 55 parts by weight of an alcohol-based or ether-based solvent.