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    Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors
    3.
    发明申请
    Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors 有权
    薄膜晶体管，制造薄膜晶体管的方法以及包括薄膜晶体管的半导体器件

    公开(公告)号：US20110227064A1

    公开(公告)日：2011-09-22

    申请号：US13064366

    申请日：2011-03-22

    申请人： Kyung-Bae Park ,  Myung-Kwan Ryu ,  Jong-Baek Seon ,  Sang-Yoon Lee ,  Bon-Won Koo

    发明人： Kyung-Bae Park ,  Myung-Kwan Ryu ,  Jong-Baek Seon ,  Sang-Yoon Lee ,  Bon-Won Koo

    IPC分类号： H01L29/12 ,  H01L21/04

    CPC分类号： H01L29/7869 ,  H01L29/4908

    摘要： Thin film transistors including a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, and at least one metal of the second metal oxide is the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors.

    摘要翻译： 薄膜晶体管，包括设置在漏电极和源电极之间的半导体沟道; 以及栅极绝缘层，其设置在所述半导体沟道和栅电极之间，其中所述半导体沟道包括第一金属氧化物，所述栅极绝缘层包括第二金属氧化物，并且所述第二金属氧化物的至少一种金属至少与 第一金属氧化物的一种金属，薄膜晶体管的制造方法以及包括薄膜晶体管的半导体器件。

    Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors
    5.
    发明授权
    Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors 有权
    薄膜晶体管，制造薄膜晶体管的方法以及包括薄膜晶体管的半导体器件

    公开(公告)号：US09564531B2

    公开(公告)日：2017-02-07

    申请号：US13064366

    申请日：2011-03-22

    申请人： Kyung-Bae Park ,  Myung-Kwan Ryu ,  Jong-Baek Seon ,  Sang-Yoon Lee ,  Bon-Won Koo

    发明人： Kyung-Bae Park ,  Myung-Kwan Ryu ,  Jong-Baek Seon ,  Sang-Yoon Lee ,  Bon-Won Koo

    IPC分类号： H01L29/786 ,  H01L29/49

    CPC分类号： H01L29/7869 ,  H01L29/4908

    摘要： Thin film transistors including a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, and at least one metal of the second metal oxide is the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors.

    摘要翻译： 薄膜晶体管，包括设置在漏电极和源电极之间的半导体沟道; 以及栅极绝缘层，其设置在所述半导体沟道和栅电极之间，其中所述半导体沟道包括第一金属氧化物，所述栅极绝缘层包括第二金属氧化物，并且所述第二金属氧化物的至少一种金属至少与 第一金属氧化物的一种金属，薄膜晶体管的制造方法以及包括薄膜晶体管的半导体器件。