摘要:
The present invention provides a process for generating mixed acetal polymers by reacting a hydroxyl containing polymer or monomer with vinyl ether and alcohol in the presence of an acid catalyst. The process of this invention provides a new class of polymers based on mixed acetals which are prepared in-situ with one reaction. The mixed acetal polymers are inexpensive to synthesize and readily reproducible. The resulting mixed acetal polymer is blended with a photoacid generator and dissolved in a solvent to produce a chemically amplified resist composition. A process for forming a pattern comprises the steps of providing the chemically amplified resist composition, coating a substrate with the resist composition, imagewise exposing the resist coated substrate to actinic radiation, and forming a resist image by developing the resist coated substrate.
摘要:
The present invention provides a process for generating mixed acetal polymers by reacting a hydroxyl containing polymer or monomer with vinyl ether and alcohol in the presence of an acid catalyst. The process of this invention provides a new class of polymers based on mixed acetals which are prepared in-situ with one reaction. The mixed acetal polymers are inexpensive to synthesize and readily reproducible. The resulting mixed acetal polymer is blended with a photoacid generator and dissolved in a solvent to produce a chemically amplified resist composition. A process for forming a pattern comprises the steps of providing the chemically amplified resist composition, coating a substrate with the resist composition, imagewise exposing the resist coated substrate to actinic radiation, and forming a resist image by developing the resist coated substrate.
摘要:
The present invention provides a process for generating mixed acetal polymers by reacting a hydroxyl containing polymer or monomer with vinyl ether and alcohol in the presence of an acid catalyst. The process of this invention provides a new class of polymers based on mixed acetals which are prepared in-situ with one reaction. The mixed acetal polymers are inexpensive to synthesize and readily reproducible. The resulting mixed acetal polymer is blended with a photoacid generator and dissolved in a solvent to produce a chemically amplified resist composition. A process for forming a pattern comprises the steps of providing the chemically amplified resist composition, coating a substrate with the resist composition, imagewise exposing the resist coated substrate to actinic radiation, and forming a resist image by developing the resist coated substrate.
摘要:
The present invention provides a process for generating mixed acetal polymers by reacting a hydroxyl containing polymer or monomer with vinyl ether and alcohol in the presence of an acid catalyst. The process of this invention provides a new class of polymers based on mixed acetals which are prepared in-situ with one reaction. The mixed acetal polymers are inexpensive to synthesize and readily reproducible. The resulting mixed acetal polymer is blended with a photoacid generator and dissolved in a solvent to produce a chemically amplified resist composition. A process for forming a pattern comprises the steps of providing the chemically amplified resist composition, coating a substrate with the resist composition, imagewise exposing the resist coated substrate to actinic radiation, and forming a resist image by developing the resist coated substrate.
摘要:
The present invention relates to a process for preparing a radiation-sensitive composition, comprising the steps of (1) passing a solution of a crude polymer comprising a mixture of polymer chains having different molecular weights through a porous polymeric media having a predetermined molecular weight cut-off (MWCO) value, thereby separating the crude polymeric mixture into a first fraction comprising polymer chains having molecular weights above the MWCO value and a second fraction comprising polymer chains having molecular weights below the MWCO value; and (2) adding at least one fraction produced in the first step to at least one radiation-sensitive compound and at least one solvent to produce a radiation-sensitive composition.
摘要:
Thermally cured undercoat for use in lithography of a thermally cured composition comprising a hydroxyl-containing polymer, an amino cross-linking agent and a thermal acid generator, wherein the hydroxyl containing polymer is a polymer comprising units m, n and o of the following formula: wherein R1 is H or methyl; R2 is a substituted or unsubstituted C6-C14 aryl acrylate or C6-C14 aryl methacrylate group wherein the substituted groups may be phenyl, C1-4 alkyl or C1-4 alkoxy; R3 is a hydroxyl functionalized C1-C8 alkyl acrylate, methacrylate or C6-C14 aryl group, R4 is a C1-C10 linear or branched alkylene; p is an integer of from 1 to 5 with the proviso that there are no more than thirty carbon atoms in the [—R4O—]p; R5 is a C1-C10 linear, branched or cyclic alkyl, substituted or unsubstituted C6-C14 aryl, or substituted or unsubstituted C7-C15 alicyclic hydrocarbon; and m is about 40 to 70, n is about 15 to 35 and o is about 15 to 25.
摘要翻译:包含含羟基聚合物,氨基交联剂和热酸发生剂的热固化组合物的光刻用热固化底涂层,其中含羟基聚合物是包含下式的单元m,n和o的聚合物 :其中R 1是H或甲基; R 2是取代或未取代的C 6 -C 14芳基丙烯酸酯或C 6 -C 6烷基, 14个芳基甲基丙烯酸酯基团,其中取代的基团可以是苯基,C 1-4烷基或C 1-4烷氧基; R 3是羟基官能化的C 1 -C 8烷基丙烯酸酯,甲基丙烯酸酯或C 6 -C 3 > 14个芳基,R 4是C 1 -C 10直链或支链亚烷基; p是1至5的整数,条件是在[-R 4 O - ] P n中不超过30个碳原子。 R 5是C 1 -C 10直链,支链或环状烷基,取代或未取代的C 6 - C 14芳基或取代或未取代的C 7 -C 15脂肪族烃; m为约40至70,n为约15至35,o为约15至25。
摘要:
A photoresist composition comprising at least one acetal polymer having a silicon substituent; provided that the silicon substituent is not directly attached to the acetal functionality, thereby providing high resolution, improved DOF, and improved dimensional stability under metrology conditions.
摘要:
Thermally cured undercoat for use in lithography of a thermally cured composition comprising a hydroxyl-containing polymer, an amino cross-linking agent and a thermal acid generator, wherein the hydroxyl containing polymer is a polymer comprising units m, n and o of the following formula: wherein R1 is H or methyl; R2 is a substituted or unsubstituted C6-C14 aryl acrylate or C6-C14 aryl methacrylate group wherein the substituted groups may be phenyl, C1-4 alkyl or C1-4 alkoxy; R3 is a hydroxyl functionalized C1-C8 alkyl acrylate, methacrylate or C6-C14 aryl group, R4 is a C1-C10 linear or branched alkylene; p is an integer of from 1 to 5 with the proviso that there are no more than thirty carbon atoms in the [—R4O—]p; R5 is a C1-C10 linear, branched or cyclic alkyl, substituted or unsubstituted C6-C14 aryl, or substituted or unsubstituted C7-C15 alicyclic hydrocarbon; and m is about 40 to 70, n is about 15 to 35 and o is about 15 to 25.
摘要:
A heat resistant positive-working photosensitive composition that has a polybenzoxazole precursor bearing acid labile functional groups, a photoacid generator, a photosensitizer, and a solvent. The polybenzoxazole precursor bearing acid labile functional groups, has the structure: ##STR1## wherein k.sub.1 is an integer of 1 or 2, k.sub.2 is an interger of 0 or 1, and the sum of k.sub.1 and k.sub.2 is 2; Ar.sub.1 is a tetravalent aromatic, aliphatic, or heterocyclic group, or mixtures thereof; Ar.sub.2 is a divalent aromatic, aliphatic, or heterocyclic group or siloxane group; D is a monovalent acid labile group; and n is an integer from 20 to 200. A portion of Ar.sub.1 can be a divalent aromatic, aliphatic, or heterocyclic diamine moiety such that the fraction of diamine compound is 0-60 mole percent and the sum of diamine and diamino dihydroxy compound is 100%.Preparation of chemical amplification based positive-working, aqueous base developable photosensitive polybenzoxazole (PBO) precursors, the formulation of the resin composition, and the process for preparing heat-resistant relief structures from this resin composition. The positive photosensitive resin compositions are suitable especially for applications in microelectronics.
摘要:
A high thermal alkali-soluble novolak binder resin, comprising the addition-condensation reaction product of a phenolic mixture with at least one aldehyde source, the feedstock of the phenolic mixture for the reaction comprising:(1) about 25 to about 40 weight percent of the phenolic mixture being a monomer selected from meta-cresol 2,5-xylenol or the combination thereof;(2) about 50 to about 70 weight percent of the phenolic mixture being para-cresol; and(3) about 3 to about 20 weight percent of the phenolic mixture being acetamidophenol; all percentages based on the weight of total phenol monomer feedstock.The invention is also directed to a positive working photoresist made from the composition.